So transistors that leak more (I assume you mean Drain-Source leakage) in cutoff state have a lower threshold voltage (Saturation voltage).
Is that unique to FinFETs or is that true for all MOSFETs? I always assumed MOSFETs with a lower threshold voltage had lower RDS(on) as well as lower DS leakage.
That s a general rule for fets/mosfets, RDSon is dependent of the device conductance, if the device conduct more when switched off it will also conduct more (lower RDSon) when switched on.
For a given operating voltage current through the device will rise quasi exponentialy as long as the gate voltage is below threshold, this latter level is the one at wich the exponential evolution has converged to a square law evolution (drain/source current in function of gate voltage).