You should start with your own link. Dynamic power scales proportionally to Cdyn * Frequency * Voltage^2. You're focusing only on frequency, ignoring both the Cdyn and Voltage terms. Zen 4c isn't half the area with the same VF curve.
This show that you dont really understand the thing...
Putting the capacitance and frequency is using twice the same parameter in a way.
The current through an ideal mosfet increase as the square of the voltage.
To increase the current by a X factor , and hence frequency by the same X ratio, you ll have to increase voltage by sqrt(X)
FI to increase frequency by a 2 factor voltage must be increased by 1.414x
Power will be increased by 2 if we account only this factor, but since frequency is also increased by a 2 factor the whole power increase by a 4 ratio.
So we can write that P(f) = f^2 without normalizing the equation, FI if a CPU use 100W at 5GHz the normalized relation would be :
P(f) = 4.f^2 with frequency unities in GHz.
That is, power increase quadratically in respect of frequency, but keep in mind that it s a theorical best case and that real mosfets do not exhibits that good of a power/frequency slope, generaly the exponent is between 2.2 and 2.8 depending of the process.
As for the capacitance it is not needed in this relation because it is assumed as being at its maximal value since we are talking of a CPU that work at full throughput.
Now Intel put great care to linearize its process as much as possible and they have generally a better slope than TSMC who seems more concerned about time to market, if we look at ADL FI they manage to have a 2.2 exponent while TSMC s 7nm process hoover at 2.6-2.8 depending of the exact process iteration, but that s only part of the story because TSMC has lower cpacitance to begin with, so at low power/low frequency their process has a better perf/watt at equivalent node.