Lithography: Same
GAA: Same
Low NA: Same (both use mult-patterning instead)
BSPDN: No (Same)
What IS potentially different?
- More granular drive strength options in libraries
- More granular block libraries (enhance NanoFlex capabilities)
- Tweaked and tightened transistor libraries.
Sure, TSMC wants to call this a new node. They get to charge more that way. I don't want to belabor the point, but tweaking libraries to ME doesn't justify calling it a new node. It's just a tweak.
We will see bigger jumps with High NA and again with BSPDN. Those both justify calling it a new node in my book. YMMV.