But amd is fine, IBM on the other hand, massive Ed ram caches really high metal stacks, paying GF billions and doing personal transfers, I wouldn't be surprised to see a law suite .....
IBM will only need to wait a bit after 12FDX.
"While ETSOI technology is initially offered as a performance booster for low-power applications at 28-nm, it is very likely that it can cover many of the high-performance applications in 20-nm and beyond."
-> Extremely thin SOI for system-on-chip applications - 9-12 Sept. 2012
It's very important that the above 20-nm and beyond is taken with this:
-> Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS - 12-14 June 2012
Which details what is needed: "High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI(SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. "
December 2015 - March 2016 via Ultra-thin body & buried oxide SOI substrate development and qualification for Fully Depleted SOI device with back bias capability
which shows this:
https://i.imgur.com/fuNQyf4.jpg
<14nm UTBOX15s (strained) for just SSDOI
Then the date is inside: FD-SOI Technology by Bich-Yen Nguyen, Soitec
https://i.imgur.com/ibzT0OU.png
Beyond 12FD: Both SSDOI and SGOI
The date is pretty important as it is after:
https://www.globalfoundries.com/new...nter-long-term-supply-agreement-fd-soi-wafers
Meaning the above roadmap is the WSA GlobalFoundries-SOITEC roadmap.
GlobalFoundries post-12FDX whether it be 12FDX+ or 7FDX. It will be High Performance in the eyes of IBM.