NostaSeronx
Diamond Member
- Sep 18, 2011
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The only threading design that can replace CMT is another CMT design.
Do to the timeline of 18FDS; https://community.arm.com/developer...ung-foundry-and-arm-collaborate-on-18nm-fdsoi
12FDX is more likely to be used in a 2020 SoC, after the 2019 Stoney Ridges.
32nm/28nm, Bulldozer to Excavator => High-cost design, High performance computing, Low density.
12FDX, Derived to new CMT architecture => Low-cost design, Cost-effective mobility, High density.
While peak performance will be lost, there should still be a substantial boost in performance. With the added benefit of costing less to manufacture and buy overall. The move to 256-bit datapaths warrants a design that will stay at the 128-bit datapaths.
https://www.semanticscholar.org/pap...Cole/f523cc70532a205032d6d8459fad0718bff339b1
Figure 2 => Most of the design is RVT; 34.4% at normal length, 59.2% at extended length, 5.9% RVT that is memory.
https://www.semanticscholar.org/pap...efer/7b06ddb135ffc595ee3856a3b78b56b9d44a6ac4
Figure 21 => Zen is much more diverse in VT. You might be wondering what a wimpy VT is;
"For example, nominal finFETs and wimpy finFETs each have different performance characteristics and thus it may be desirable to choose either a nominal finFET or a wimpy finFET based upon the particular requirements of a semiconductor device. For example, a larger gate length provides for lower leakage and variability. Due to the slightly larger gate length of the wimpy finFET, the device drive current of the wimpy finFET is lower than that of a nominal finFET. In addition, it may be desirable to include a mixture of nominal finFETs and wimpy finFETs on the same substrate such as in certain complementary metal oxide semiconductor (CMOS) product applications."
12FDX brings bi-directional body-biasing. FBB w/ RVT = LVT-like, RBB w/ RVT = HVT-like, yadda yadda yadda. SRAM/Memory gets to use Single-well, Mixed-well(6T being N/P Well, and 2T with N-well for 8T-like perf and 6T-like density, etc.). For the extended length Vt, body biasing can also cull that as well. I'm also pretty sure, gate-first FDSOI poly-biasing is cheaper than gate-last Bulk poly-biasing.
Do to the timeline of 18FDS; https://community.arm.com/developer...ung-foundry-and-arm-collaborate-on-18nm-fdsoi
12FDX is more likely to be used in a 2020 SoC, after the 2019 Stoney Ridges.
32nm/28nm, Bulldozer to Excavator => High-cost design, High performance computing, Low density.
12FDX, Derived to new CMT architecture => Low-cost design, Cost-effective mobility, High density.
While peak performance will be lost, there should still be a substantial boost in performance. With the added benefit of costing less to manufacture and buy overall. The move to 256-bit datapaths warrants a design that will stay at the 128-bit datapaths.
https://www.semanticscholar.org/pap...Cole/f523cc70532a205032d6d8459fad0718bff339b1
Figure 2 => Most of the design is RVT; 34.4% at normal length, 59.2% at extended length, 5.9% RVT that is memory.
https://www.semanticscholar.org/pap...efer/7b06ddb135ffc595ee3856a3b78b56b9d44a6ac4
Figure 21 => Zen is much more diverse in VT. You might be wondering what a wimpy VT is;
"For example, nominal finFETs and wimpy finFETs each have different performance characteristics and thus it may be desirable to choose either a nominal finFET or a wimpy finFET based upon the particular requirements of a semiconductor device. For example, a larger gate length provides for lower leakage and variability. Due to the slightly larger gate length of the wimpy finFET, the device drive current of the wimpy finFET is lower than that of a nominal finFET. In addition, it may be desirable to include a mixture of nominal finFETs and wimpy finFETs on the same substrate such as in certain complementary metal oxide semiconductor (CMOS) product applications."
12FDX brings bi-directional body-biasing. FBB w/ RVT = LVT-like, RBB w/ RVT = HVT-like, yadda yadda yadda. SRAM/Memory gets to use Single-well, Mixed-well(6T being N/P Well, and 2T with N-well for 8T-like perf and 6T-like density, etc.). For the extended length Vt, body biasing can also cull that as well. I'm also pretty sure, gate-first FDSOI poly-biasing is cheaper than gate-last Bulk poly-biasing.
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