What do you mean? Microsoft's Surface Pro 3 is also 12". Phones? Sure, Llama Mountain is 7.2mm thick, less than iPhones 5s' 7.6mm. Core M isn't made for phones, though.
You don't seem to be getting the point here - thickness is meaningless without also comparing the other two dimensions. You were implying that the Core-M reference tablet generates less heat than iPad Air because it's slightly thinner, while ignoring that it has much more surface area to remove heat.
Intel has only been promoting 14nm. They only mentioned 10nm for their cost/transistor slides.
14nm products haven't even launched. They'll talk about 10nm when it's appropriate. I'm also not saying power consumption will be an order of magnitude less, but from what I've read it's possible, depending on the materials. My point was that when we're talking about an order of magnitude with those materials, Intel could take a massive lead that would give them an unambiguous leadership position.
That link doesn't say that 10nm won't use III-V. First it seemed that 10nm would use III-V, but then I saw this roadmap from Applied Materials, saying Intel will use Germanium. But those 2 slides, from ASML and Intel, say 10nm will use III-V and Germanium.
http://download.intel.com/newsroom/...esearch_Enabling_Breakthroughs_Technology.pdf
http://www.sokudo.com/event/images/130710/5_ASML.pdf
Okay, so:
An Intel process researcher says that 10nm is done but they're investigating III-V with respect to 7nm and beyond - and you don't see how this is saying they're not using III-V in 10nm? It doesn't matter what ASML says can be used at nodes. I'll bet you think Intel will be using EUV at 10nm too based on what ASML says. And as for the 2011 Intel slides you linked (also by Mike Mayberry!), I can't find anywhere where it says III-V is slated for 10nm.Mayberry said that everything up to the 10-nm CMOS node – which is in development at Intel and will ramp production in 2015 - is effectively done. However, he said his job depends on being able to continue to double density and performance every two years beyond that, something for which the way forward is much less clear.
There are numerous ideas that may provide a continuation of silicon such as the introduction of germanium, III-V materials into the transistor channel and the move from fins to vertical wires or dots with gate-all-around (GAA) structures. However, once all of that has been worked through, at great cost, where do you go next, he asked the audience.
