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Lifer
- Nov 14, 2011
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Which manufacturing node will Pascal be made on? Nvidia's slide doesn't list FinFET as a new feature:
I would hope 14/16nm, but am kind of expecting 20nm.
Which manufacturing node will Pascal be made on? Nvidia's slide doesn't list FinFET as a new feature:
I'm afraid it's not a question of time, I don't think David Kanter will be legally allowed to write such lengthy articles on RWT any more. I'm lucky enough to have a Microprocessor Report subscription
PS - For reference here's DK original announcement
The HMC interface didn't work out so they are using DDR4 channels for the time being:
http://www.eetimes.com/document.asp?doc_id=1322855&
Mike Black said:"We plug(ed) off the open (HMC) interface of the consortium and we put on an interface optimized for Knights Landing"
https://www.youtube.com/watch?v=Jc6B0EZKUEU (at 4:15)
eetimes said:"Our HMC will be packaged with a very optimized interface, so they can be placed very close to the Xeon Phi using DDR4 channels," Mike Black, HMC technology strategist at Micron, told us. "And then all of that will be put into a common package that then drops into a single socket on the board."
http://www.eetimes.com/document.asp?doc_id=1322855&
I would hope 14/16nm, but am kind of expecting 20nm.
Yes my bad i forgot to mention i was talking about 3D Stack.
What i was trying to point out is that Haswell Crystalwell was the first commercial x86 CPU with On-Package Memory. KNL will also use the same technology.
I would hope 14/16nm, but am kind of expecting 20nm.
Pascal is definitively TSMC 16FF (JHH talked about it after Pascal announcement)
20nm will be used first for Erista SoC (or Tegra M1, M stands for Maxwell). No idea if will see GPUs on this node, as it's optimized for SoCs. 16FF is best suited for GPUs
No idea if we'll see GPUs on this node, as it's optimized for SoCs. 16FF is best suited for GPUs
yep and I don't agree with him.Wait, this contradicts what ShintaiDK said a few posts ago.
I would say TSMCs 20nm is the best suited for high performance dGPUs.
TSMCs 16FF is targetted at much lower power targets.
It might be true that it's not suited to a high clock CPU design, but GPU workloads have the advantage of being embarrassingly parallel. You can reach the same performance target by halving the clockspeed (due to the low power target nature of TSMC's process), and doubling the functional units. Intel did this with its HD 5000 graphics (the ultrabook Graphics w/o the eDRAM). This trick doesn't apply as cleanly to CPU performance targets, because those care more about single-threaded performance (in general), which is more closely tied to the manufacturing process (see Kaveri's single thread performance and clock speed).
I don't know exactly who's picking what, as there are a lot of mixed signals being given, but 16FF shouldn't be an issue for high performance GPUs. Even if it is a mobile-focused process, we're talking a full node density and performance increase, in addition to FinFETs. The pros would outweigh the cons.yep and I don't agree with him.
If you look at Nvidia roadmap (SoC and GPU), they always planned to avoid 20nm to go directly to 16FF. It's only because 16FF was delayed that they changed their mind to include stop gap solutions like Erista
I would say TSMCs 20nm is the best suited for high performance dGPUs.
TSMCs 16FF is targetted at much lower power targets.
Double (or ateast xx% bigger) the chip size is a really bad tradeoff for 15% density reduction and the large FF penalty performance wise. Specially when 16FF doesnt seem to be around the corner and it will be in high demand by other companies.
This thing will also come as a standalone CPU! Was waiting for Haswell-E, but I think I'll wait for this instead since my FX8350 is still doing well.
Cadence said:16nm FinFET Processes
The 16FF and 16FF+ technologies are "ready for prime time," according to Sun (left). He noted that the 16FF yield has already caught up with the 20nm planar (20SoC) process node. As a second-generation FinFET technology, he said, 16FF+ can provide an additional 15% die size reduction compared to 20SoC.
Liu said that TSMC plans 15 16FF tapeouts this year, and that compared to 20SoC, 16FF can provide a 40% performance increase at the same power consumption. 16FF+ allows an additional 15% performance increase. Volume production for the 16nm FinFET nodes is expected in 2015. "We are confident that our customers can use this [16nm] technology to produce mobile devices superior to those produced by IDMs," he said.
Hou spoke in detail about TSMC's IP silicon validation for 16FF. He said the company has finished silicon validation for high-speed and high-density standard cell libraries, including more than 8,000 cells. The silicon report shows "very good SPICE to silicon chip correlation." As for memory, TSMC has taped out more than 250 SRAM instances and has finished silicon validation.
Pointing to a 128Mb compiled SRAM instance, Hou said that TSMC can reduce minimum Vcc (supply voltage) by more than 300mV. Peripheral logic can run as low as 0.3 volts, providing further reductions in chip power. TSMC has also completed silicon validation for 1.8V and 3.3V I/Os, analog IP, and eFuse metal.
"All of the silicon reports will be available in two to three weeks," Hou said. "The 16nm FinFET process is very mature and the ecosystem is ready for your design."
And what about 16FF+? Hou said that TSMC was able to improve power, performance, and area in this "second generation" FinFET technology for four reasons:
Combine all these factors, Hou said, and a 16FF+ ring oscillator simulation will show a 20% to 23% speed improvement compared to 16FF. More specifically, standard cells show a 16% to 18% speed improvement, memory shows a 17%-19% speed improvement, eFUSE shows a 13% speed improvement, and I/O devices provide a 3% speed improvement. However, the 16FF+ technology significantly reduces I/O device leakage.
- Learning from 20SoC production has allowed for better process control, and as a result, signoff corners have been tightened so as to reduce the need for over-design
- Device enhancement
- Middle end of line (MEOL) improvements
- Back end of line (BEOL) improvements
Analog IP, such as PLLs and SerDes, shows a 15% active power reduction. For DDR4 IP, Hou said, TSMC has seen a 20% standby power reduction. All of the design kits and collateral for 16FF+ will be ready by the end of April 2014. Foundation IP will be ready by the end of May, and the complete memory compiler will be available in July, although "for key instances we will support you in May and June," Hou said.
Well, the almighty Intel did it, so it must not have been that bad of an idea. Also, it's more like a 36% reduction (1-(16/20)^2 = .36), and you wouldn't necessarily have to halve and double. I just used those numbers as an example.
Is it about my post?Reading this forum generally causes electroshock's to my brain:\
It's knee deep in [stuff], as far as the eye can see, pooped
out relentlessly by some of the 24/7 posters.
Is it about my post?
It is quite interesting to see somebody here relates the scale of chips that can be built on a node to whether or not the node is low-power... in its positioning. Hmm.It might be true that it's not suited to a high clock CPU design, but GPU workloads have the advantage of being embarrassingly parallel.
