Originally posted by: MODEL3
Originally posted by: Idontcare
That's no substitute for public links though, you have the right to be as wary over my unsupported statements as those made on Theinq or elsewhere.
No I didn't mean that.
Before 3 years or something I read about the terms "
parametric yield" & "
functional yield" and if I remember correctly the parametric loss it was something like 20% (or 30%, I don't remember) of the loss in a yield.
And when I read that the rate for TSMC's 40nm yield was only 30% (now they said that they improved the rate to 60%) I thought that 70% is way high for
parametric yield problems only.
There are no hard and fast limits or bounds like that on what is parametric yield or functional yield.
Parametric yield starts out at 0% at the time a new node is defined, it is iteratively improved upon until such time (years) that the parametric yield is finally above a minimum threshold criterion viewed internally as being necessary to enable risk-production on the node. Some parameters are more critical than others, so not all parameters get equal priority to address their shortcomings with respect to the spec.
The same is true for functional yield, which has an additional parameter of die-size, and is usually normalized and represented as "D0" for defect density. Fabs are benchmarked for there D0, and consultant reports can be purchased which will tell you the D0 of your competitor's fabs (albeit sanitized by labels, TSMC is not labeled but rather will be called "competitor A" or some such).
Suffice to say you can have 100% yield loss from parametric problems alone, just as you can have 100% yield loss from functional (defect density) problems alone. When it comes to making scrap wafers the sky is the limit. However it is atypical to have a node enter the risk-production phase and still have yield crippling parametric issues. That is simply a sign that the node was absolutely not ready for risk production and needed another 6-12months in the iterative learning cycle phase to get the silicon hitting the parametric specs.
Intel could have, for example, probably sent their 32nm process tech to risk-production a year ago if they wanted to but it would have incurred similar issues with certain parametric parameters not hitting their targets resulting in significant yield loss and debugging issues.
The challenge is balancing the process tech R&D timeline with the IC design/layout timeline as you don't want to go to tapeout and try to get first silicon when the process tech is so immature that it can't hit the parametric targets (you lose a lot of the desired feedback and learning from the first-silicon in this case), but at the same time you don't want to needlessly over-resource your process tech R&D team to the point that they have the node fully ready to go but sitting there unused because there are no devices taped out for it.
In these two-team races there is always going to be one gated by the other, all you can hope to do at a high-level project management perch is try and align the timelines of both teams as closely as possible (which requires an intentional resource
imbalance)...when both teams are internal (like Intel, and how AMD used to be) then we in the public sector don't get to witness the disconnects in public theater form. But when you've got two otherwise independent business entities involved (foundry and customer, TSMC and AMD) then it is more likely to make it out into the public domain as that is where the shareholders are and they like to know who to blame when a ball gets dropped.