Originally posted by: ilkhan
OT: whats Intel's NAND shrink after 34nm (aka the probable G3 SSD generation, with 100% more SATA6Gbps)
I'm clueless there, whatever they can viably push their immersion litho tools to do.
Flash nodes numbers are not just labels like they are in CMOS logic, a flash node is explicitly defined as the uncontacted gate half-pitch which is why every flash manufacturer has a seemingly unique node number. Micron has 34nm, Samsung has 42nm, etc.
Intel (Micron) went from 50nm to 34nm. That's a nice shrink factor of 0.68x. Assuming they went over-aggressive by 0.02x in a way that can't be repeated for the next node, and perhaps they end up "falling back" to the 0.7x scaling trend line leading from their 50nm node,
that would put their next gen node at around 24-25nm.
Timing wise, it took ~2.5yrs for IM Flash to go from 50nm to 34nm, so we'd be pleasantly surprised to see their next node in the fall of 2011.
(as fast as things change in this industry that sure seems painfully slow coming doesn't?)