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News GlobalFoundries Plans Billion-Euro Investment to Expand Chip Manufacturing in Germany

marees

marees

Platinum Member

GlobalFoundries Plans Billion-Euro Investment to Expand Chip Manufacturing in Germany​

Press Release by Nomad76 Today, 19:41 Discuss (0 Comments)
GlobalFoundries (GF) today announced plans to invest €1.1 billion to expand its manufacturing capabilities at its Dresden, Germany site. The investment will enable a production capacity increase to more than one million wafers per year by the end of 2028, making it the largest site of its kind in Europe.

The expansion, known as project SPRINT, is expected to be supported by the German federal government and the State of Saxony under the framework of the European Chips Act, with EU approval for the full program expected later this year.
 
While never officially abandoning development work on 12FDX, they essentially sidelined it for enhanced, application specific versions of 22FDX. Their best shipping nodes are 12LP+ and 22FDX+. Speculation is that they are just being milked for cash by their owners to recover their purchase costs.
 
12FDX will be dependent on SOITEC's/Leti's roadmap.
roadmap.jpeg
With eSoC.3 wafers only going into HVM in 2026.
fdsoi.jpeg
Advanced FDSOI 2030+ is expected to be Complementary FETs. If anyone is wondering what the 3D is meant to be.
 
At this point, GloFo's 12/10FDX nodes are nothing more than vaporware. It's been promised now for going on a decade. They were late with 22FDX, and anything beyond hasn't been more than a PowerPoint slide.
 
Ran Ruby Yan => the company's product director, stated during a roundtable discussion that the first PDK is planned for release in mid-2026, with production commencing in 2027.

There is only a partial month, a full month, and two quarters till they miss the most current tell all.

18FDS at Samsung is also 2026.
 
At least Samsung has workable 5/4nm class FinFet nodes and apparently has something in the 3/2nm class yielding usable dies. GloFo threw in the towel with 12+.
 
LightningZ71 said:
At least Samsung has workable 5/4nm class FinFet nodes and apparently has something in the 3/2nm class yielding usable dies. GloFo threw in the towel with 12+.
Click to expand...

With things the way they are now I bet they wished they didn't. They always seemed to be mismanaged anyway though.
 
del42sa said:
no, actually they will go up, with next node based on 20nm ultra thin FDSOI process.
Click to expand...
22FDX = Effective Minimum Gate Length = 20-nanometers
22FDX+ = Effective Minimum Gate Length = 18-nanometers
12FDX = Effective Minimum Gate Length = 15-nanometers

22FDX Family = 12nm/14nm FEOL + 22nm BEOL
12FDX Family = 7nm/10nm FEOL + 12nm BEOL

12FDX (2017-2019) = 20nm Gate Length, 10nm FinFET perf
12FDX (2021-2024) = 15nm Gate Length, 7nm FinFET perf

Where we have been at eSoC.3 being production ready for sometime now.
esoc3.jpeg
NostaSeronx said:
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View attachment 133313
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Click to expand...
Notice eSoC.2 and eSoC.3 being green. Where if you go to older ones, eSoC.3 is a different color than eSoC.2, etc.

The main barrier is the wafer, not the transistor.
 
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