Can you translate that to Ggz?L1D = 4-8 (int 4-5, fp 7-8)
L2 = 12+
L3 = 40+ (46 avg)
Mem = ~80
This has been discussed before, either in this thread or zen 4 / Ryzen 7000 thread. Someone had a link for the 20 micron figure. I can’t find it right now. What you describe is not how it works. The thickness of the cpu die for stacking is not determined by the z-height requirement. The thickness for the cache die is likely determined by hitting the z-height requirement though.CoW makes more sense in this situation. AMD also doesn't have to dice before binning at this point, I don't think (not a digital guy so not sure what all they do but I know it's possible). They can use wafer probers with some basic tests to know which dies are which corners before stacking or dicing. They would still thin the wafers though so all the dies would need to either go into a V-cache SKU at that point, or be stacked with just the structural die to make up for the thinned die but I doubt AMD wants to take that path at this point.
I don't see why the CPU would need to be thinned to 20 microns, that's approaching the thickness of what the chip has to have to support something with 9-10 metal layers and is less than what TSMC needs to get a 12 level stack. I don't know if AMD is already thinning their wafers from the ~700 micron default from the fab, but it is extremely rare for companies to go less than ~250 micron or so. Handling the dies becomes a real pain after that. That would mean AMD needs to thin to ~100 micron to fit another layer on top and have the same height as their standard die. I have a feeling they start with a thicker standard die though.
Can you translate that to Ggz?
Just because it sits on top of AMD's internal stack doesn't mean it can command halo prices. It's still subject to the market forces. A halo product needs to be at the top of the stack, including a competitor's stack, to command halo prices. If your top SKU is only as fast as your competitor's middle level SKU, guess what, you're going to have to limit your asking price to that competitor's middle level SKU price. More importantly, that mid-level SKU ain't going to have halo level pricing.Dude, premium CPUs command premium prices. The 1800X was launched at $499 and was not even the top dog at gaming. Intel has always charged a pretty penny for top of the line(see 11700K vs 11900K).
The 5800X3D will launch at $500 or more, it's a Halo product for extreme gamers. This not for people worrying about budgets, like many of you do.
What are you on about? The 5800X3D beats the 12900K At games. the 12700K is an after thoughtThe question remains: does the 5800X3D offer halo level performance to justify halo level pricing? For gaming, it might perform similarly to say a 12700K (MRSP $409)
The 12900K is a few percent faster than the 12700K for like $200 more (+50% price). According to your logic, if Intel priced the 12900K at $10000, then that makes the 5800X3D a $10000 product then?What are you on about? The 5800X3D beats the 12900K At games. the 12700K is an after thought
This has been discussed before, either in this thread or zen 4 / Ryzen 7000 thread. Someone had a link for the 20 micron figure. I can’t find it right now. What you describe is not how it works. The thickness of the cpu die for stacking is not determined by the z-height requirement. The thickness for the cache die is likely determined by hitting the z-height requirement though.
The thickness isn’t just required height divided by the number of stacks. For the v-cache part, the cpu die must have TSVs for connection to the cache chip. The cache chip doesn’t need TSVs for a single stack high, so it can just be polished down to meet the z-height requirement. TSVs are made by etching holes in the wafer and filling with metal. To make a 250 micron thick die with TSVs they would need to etch holes over 250 microns deep. That might be on the edge of possible with current tech, but would likely not yield well at all.
So, current v-cache parts are likely super thin cpu die with the rest of the thickness from the cache die and filler silicon. The stack is likely made with CoW tech; cpu wafer is very thin, cache chiplets and filler silicon is thicker and already diced. If they go for more than 1 cache die stacked, then the cache die would probably be made with WoW (wafer on wafer) tech. They would stack something like 4 cache wafers, bond, then dice into chiplets. The cache chiplets would then be put into a carrier wafer with filler silicon and stacked on top of the cpu wafer (CoW) and then diced.
edit: this says less than 50 micron per layer:
AnandTech Forums: Technology, Hardware, Software, and Deals
Seeking answers? Join the AnandTech community: where nearly half-a-million members share solutions and discuss the latest tech.www.anandtech.com
Still can’t find the older discussion.
edit 2: Also, they would never handle die at 20 micron thickness. The cpu wafer would possibly be that thickness, but it would have a thick cache chip and filler silicon stacked on top before it is diced.
There are actually multiple ways of doing TSVs (mid, first, last) with two of those the TSVs are implanted before the wafer is even finished. I was assuming that they would only thin the die as much as needed to have equal heights between the two layers, but one die could be significantly thinner than another.
TSV's don't have to go all the way through. From what I've seen, I don't know how they would connect the cache to the CPU TSVs without having TSVs on the cache die. You can do TSV to bumps but the ball pitch is significantly larger than TSV pitch and I don't see how they could connect all of the Zen3 TSVs to bumps unless they are using multiple TSVs for the same net to connect to 1 bump with some kind of interposer which I haven't seen done before. Either that or AMD is using far fewer TSVs than it appears and they are spread out across the cache area. If both dies do need TSVs then it makes more sense to keep them at least decently close in height. Doing 200-300 micron deep TSVs can be done though I'm not sure what the limits are given the TSV pitch AMD is using.
If they do go for multiple stacks or ever had it as a possibility, then the cache dies definitely have to have TSVs. I agree that CoW for the CPU layer makes the most sense with dicing after bonding.
That's for a 12 high stack where it has to be that thin to get that many layers.
The handling comment was for their standard die thickness, not for the stacked dies.
fuse.wikichip.org
So it isn't a TSV at first, only when the die is thinned. 😉TSVs have to go all the way through. It is right in the name (Through Silicon Via). Also, TSMC SoIC doesn’t use bumps at all. It is direct contact through the metal of the TSV.
AnandTech Forums: Technology, Hardware, Software, and Deals
Seeking answers? Join the AnandTech community: where nearly half-a-million members share solutions and discuss the latest tech.www.anandtech.com
The cpu die will be on the order of 20 microns thick. As I have said before (somewhere), to make the TSVs, they etch into the wafer and fill the holes with metal. Then they build the normal device layers and metal layers on top of that. Once finished, it is flipped over and polished down from what was the bottom of the wafer to expose the TSVs that were etched from the top. As I said, for a single layer of cache, the cache die doesn’t need any TSVs since there is nothing that will be stacked on top of the cache die. For the cache die, they can just make a normal wafer except with contact points on top to match the TSVs on the cpu. This is the same as a normal flip-chip except with contact points to match the the TSVs on the cpu instead of IO pads. So they make the cache wafer, dice it into separate chips, flip it over, put it in a carrier wafer with a lot of other cache die/filler silicon, and then bond it to the CPU wafer. It would technically be the original bottom of the cpu wafer. The top of the cpu wafer will have the IO pads for connection to the substrate, like a normal flip-chip device.
See the hybrid bonding images here:
![]()
AMD 3D Stacks SRAM Bumplessly
AMD recently unveiled 3D V-Cache, their first 3D-stacked technology-based product. Leapfrogging contemporary 3D bonding technologies, AMD jumped directly into advanced packaging with direct bonding and an order of magnitude higher wire density.fuse.wikichip.org
I have seen some SEM images of actual devices where the silicon thickness appears to be down to about 2x the thickness of the device plus metal layers.
It isn’t elevated. It is completely flat. See the video I just added to my previous post from the last discussion on this. It takes advantage of the fact that two flat pieces of the same metal will actually weld together in a vacuum. I have seen quite a bit about die stacking over the years and they do polish the wafer down so thin that they are actually floppy.So it isn't a TSV at first, only when the die is thinned. 😉
That article and none I've read says anything substantial on the bonding. The appearance of an explanation. We simply don't know how it's done.
I wonder if they etch away a thin layer of silicon leaving the Cu slightly (nm) elevated and then pressure fuse the dies in a vacuum.
TSVs have to go all the way through. It is right in the name (Through Silicon Via).
Also, TSMC SoIC doesn’t use bumps at all. It is direct contact through the metal of the TSV.
The cpu die will be on the order of 20 microns thick. As I have said before (somewhere), to make the TSVs, they etch into the wafer and fill the holes with metal. Then they build the normal device layers and metal layers on top of that. Once finished, it is flipped over and polished down from what was the bottom of the wafer to expose the TSVs that were etched from the top. As I said, for a single layer of cache, the cache die doesn’t need any TSVs since there is nothing that will be stacked on top of the cache die. For the cache die, they can just make a normal wafer except with contact points on top to match the TSVs on the cpu. This is the same as a normal flip-chip except with contact points to match the the TSVs on the cpu instead of IO pads. So they make the cache wafer, dice it into separate chips, flip it over, put it in a carrier wafer with a lot of other cache die/filler silicon, and then bond it to the CPU wafer. It would technically be the original bottom of the cpu wafer. The top of the cpu wafer will have the IO pads for connection to the substrate, like a normal flip-chip device.
What are you on about? The 5800X3D beats the 12900K At games. the 12700K is an after thought
thats not the way it works......doing the math
cpu 4ghz
L1D = 4-8 (int 4-5, fp 7-8) = 4/(4-8) = 500mhz - 1ghz (load 64 store 32 bytes/cycle)
L2 = 12+ = 4 / 12 = 333mhz (32 bytes/cycle)
L3 = 40+ (46 avg) = 4 / 40 = 100mhz (32 bytes/cycle)
Mem = ~80 = 4 / 80 = 50mhz (32 bytes/cycle)
https://www.anandtech.com/show/1621...e-review-5950x-5900x-5800x-and-5700x-tested/4
The 5800X3D should probably come out slightly ahead of the 12900K on average just based on AMD's claims of 15% over the 5800X and looking at relative figures. Using TPUs charts for 1080p gaming the 5800X3D should be about 6.5% ahead. Tom's would put it 1.5% ahead.
A $220 12600 is going to give people an option of getting on to Intel's new platform with a solid upgrade path in the future. Really a person doesn't need to do a completely new build since they could reuse their RAM, which makes sense given the benchmarks tend to show DDR4 performing better.
You don't always need such a massive cache. Many programs fit just fine inside Zen's 32 MB of existing L3 cache and won't see any uplift with the extra cache. If the extra cache isn't being used, it doesn't make sense to waste power by continually refreshing it.
Using that video and assuming detailed knowledge, compares to getting a degree by reading Scientific American.It isn’t elevated. It is completely flat. See the video I just added to my previous post from the last discussion on this. It takes advantage of the fact that two flat pieces of the same metal will actually weld together in a vacuum. I have seen quite a bit about die stacking over the years and they do polish the wafer down so thin that they are actually floppy.
Edit: also, the first link I posted above literally has SEM images of some of the tech, so we know exactly what some of it looks like.
![Advanced Packaging Technology Leadership.mkv_snapshot_08.56_[2020.08.25_14.13.52].jpg Advanced Packaging Technology Leadership.mkv_snapshot_08.56_[2020.08.25_14.13.52].jpg](https://anandtech-data.community.forum/attachments/55/55583-0f03770f9cf26e9e5f9fabe38446fbe8.jpg?hash=DwN3D5zybp)
SRAM does not need to be refreshed. On a low-leakage process, SRAM power use is very close to 0 when it's not being accessed.
Remember when Intel used to charge $1,000 for their 6900K? If the 1800X would have beaten the 6900K in gaming you bet they would have price it at a premium higher, that is how things work, heck even the 11900K was overpriced compared to the 11700K but for the few extra performance was worth it for manyThe 12900K is a few percent faster than the 12700K for like $200 more (+50% price). According to your logic, if Intel priced the 12900K at $10000, then that makes the 5800X3D a $10000 product then?
it's a Halo product for extreme gamers.
They are using a denser process(Denser than L3 SRAM) that may require additional powerThat would kind of make AMD's comment about powering it off when not in use silly then :shrug:
stay with budget CPUs and stop complaining about why niche CPUs are very expensive.Good thing I don't play Halo!
stay with budget CPUs and stop complaining about why niche CPUs are very expensive.
Uh, that was a pun. Also, I haven't noticed @DrMrLordX ever worrying about CPU cost. He's one of the last of us that upgrades frequently (well, amongst current posters).stay with budget CPUs and stop complaining about why niche CPUs are very expensive.