TSVs have to go all the way through. It is right in the name (Through Silicon Via). Also, TSMC SoIC doesn’t use bumps at all. It is direct contact through the metal of the TSV.
www.anandtech.com
The cpu die will be on the order of 20 microns thick. As I have said before (somewhere), to make the TSVs, they etch into the wafer and fill the holes with metal. Then they build the normal device layers and metal layers on top of that. Once finished, it is flipped over and polished down from what was the bottom of the wafer to expose the TSVs that were etched from the top. As I said, for a single layer of cache, the cache die doesn’t need any TSVs since there is nothing that will be stacked on top of the cache die. For the cache die, they can just make a normal wafer except with contact points on top to match the TSVs on the cpu. This is the same as a normal flip-chip except with contact points to match the the TSVs on the cpu instead of IO pads. So they make the cache wafer, dice it into separate chips, flip it over, put it in a carrier wafer with a lot of other cache die/filler silicon, and then bond it to the CPU wafer. It would technically be the original bottom of the cpu wafer. The top of the cpu wafer will have the IO pads for connection to the substrate, like a normal flip-chip device.
See the hybrid bonding images here:
AMD recently unveiled 3D V-Cache, their first 3D-stacked technology-based product. Leapfrogging contemporary 3D bonding technologies, AMD jumped directly into advanced packaging with direct bonding and an order of magnitude higher wire density.
fuse.wikichip.org
I have seen some SEM images of actual devices where the silicon thickness appears to be down to about 2x the thickness of the device plus metal layers.