Originally posted by: magreen
A shred of evidence? How about the fact that not a single high end x2 was ever produced on 65nm? The Brisbanes are only for the low end. What more evidence do you need that tjeir 65nm yields stink?
Originally posted by: magreen
A shred of evidence? How about the fact that not a single high end x2 was ever produced on 65nm? The Brisbanes are only for the low end. What more evidence do you need that tjeir 65nm yields stink?
Originally posted by: CTho9305
Originally posted by: sonoran
Ouch. And it gets worse - power consumption is an exponential function of clock frequency - not linear. So higher clock speeds would be MUCH worse in terms of power consumption.
How did you arrive at that conclusion? Dynamic power = c*v^2*f. If you increase frequency by increasing voltage, you get an approximately cubic increase in power, and if you increase frequency by improving the transistors or fixing slow circuits, you get a roughly linear increase. Are you assuming static power is the largest knob in play?
Originally posted by: Cookie Monster
PHENOM X4 9500 QUAD CORE already on sale!?!?
This is one of my local NZ stores i go pick up my hardware.
Has phenoms been launched already??
Slightly confused here.
Originally posted by: JumpingJack
Originally posted by: CTho9305
Originally posted by: sonoran
Ouch. And it gets worse - power consumption is an exponential function of clock frequency - not linear. So higher clock speeds would be MUCH worse in terms of power consumption.
How did you arrive at that conclusion? Dynamic power = c*v^2*f. If you increase frequency by increasing voltage, you get an approximately cubic increase in power, and if you increase frequency by improving the transistors or fixing slow circuits, you get a roughly linear increase. Are you assuming static power is the largest knob in play?
Your dynamic power equation is correct, but he must be thinking leakage, as the gate leakage is exponential in voltage as is subthreshold tunneling source to drain.
AMD's 65 nm process is a bit weak in their drive currents, so device physics dictates that to increase the switching speed (or decrease the gate delay), increase the voltage. In the dynamic term this is a cubic like function (i.e. linear in frequency, quadratic in voltage) but also exponential in the leakage term (tunneling exponentially varies with potential difference). So it is a double-whammy.
Well firstly, you're talking about binning and not yields...
Originally posted by: Phynaz
Well firstly, you're talking about binning and not yields...
Parametric yield is the major factor in binning.
You can bin down, you can't bin up.