Plenty of Reasons to Be Confident About EUV Lithography
ASML presented process data at 28 nm half-pitch for 1:1 lines and spaces (L/S) with <10% critical dimension uniformity (CDU). Presenters also showed a large process window (>200 nm for 28 nm L/S) for EUVL compared with ArF immersion, which is why the industry continues to stand behind EUVL.
ASML, which dominates this particular scanner market, will happily sell you two 193 nm immersion scanners for double pattering instead of one EUVL scanner. But its own CoO calculations, shown in the keynote talk, concluded that end users will realize significant cost savings from EUVL compared with immersion/double patterning at 22 nm. This should put an end to the debate on whether the cost of EUVL will be competitive with that of double patterning.
In another keynote talk, AMD showed its process development results for the 22 nm node (although AMD in 2008 showed process development results for the 45 nm node, its researchers and partners in the IBM Alliance skipped over 32 nm because they expect EUVL implementation to occur beyond 22 nm).
http://www.semiconductor.net/a....html?industryid=47299