Originally posted by: f95toli
I assume the reason you are using it now is because yuou want to remove the etchant quickly.
What if you just put the chip in a mild ultrasonic bath in some isopropanol? That should remove the etchant pretty quickly-
IPA is usually a good choice because it is quite clean and evaporates without leaving any trace, if you use methanol you might have to remove any residues using IPA anyway.
The etchant is 10:1 BOE (5% hydrofluoric acid with an ammonium fluoride buffer) to etch silicon dioxide. The etch rate is 600 A/min (ie slow).
Removal of the etchant is to dip it in a DI water stop bath which dilutes it to a negligible amount. The problem here is I have a very delicate suspended gold nanostructure which is destroyed by surface tension of the removal of the water.
I tried moving the sample to methanol after the water and then blowing that off, and it worked a bit better, but I still wanted something to improve on that with. IPA would be about the same.
We usually blow dry with N2 as opposed to letting it dry because even IPA and methanol leave a very small bit of residue usually. They're infinitely better than acetone, but it you can still see stuff on the samples.
It's a moot point now though, as I now have easy access to a critical point drier. For those interested, you put your sample in the machine immersed in IPA (isopropanol in case someone doesn't know), and seal the chamber. The machine then pumps in liquid CO2 to purge the IPA, and then increases the temperature of the liquid CO2 to the critical point of ~30 C and 1350 psi. At this point the liquid and gas have the same properties. It then reduces the pressure and turns all the CO2 to gas at once, then pumps it out and returns to atmospheric pressure. No surface tension, no evaporation, just fun
