Source: http://www.virtium.com/wp-content/u...sidersations-for-Industrial-Embedded-SSDs.pdf
"Before continuing, a brief physics discussion is in order. The data value is determined by the number of bits per cell and the voltage level read by the SSD controller. The voltage level is determined by the number of electrons on the floating gate of the transistor. Over time, electrons on the floating gate can leak through the oxide layer back to the substrate. The more electrons leak, the more the voltage changes and the higher the chance of a bit error. Too many bit errors - more than the SSD controller can correct – results in uncorrectable, and eventually system, errors.
So the stronger the oxide layer, the better the data retention. Oxide strength is determined by two factors – endurance and temperature. The more program / erase cycles, the weaker the oxide layer becomes. In terms of temperature, think of the oxide layer as ice on a lake. When programming, electrons get injected from the substrate onto the floating gate. The colder the temperature, the more difficult it is to program. The hotter the temperature, the easier it is to program. The converse is also true. The colder the temperature, the more difficult it is for electrons to leak back into the substrate. The hotter the temperature, the more leakage can occur."