Originally posted by: MODEL3
So the 8mm2 die space/MB could be a possible scenario for L3 die+write buffer die+die of additional transistors.
IDC what do you think?
Sounds reasonable to me. They won't use exact identical sram sized cells and layout for each new design, even on same process node, though.
As Inteluser is alluding to, changes in associativity matter, as well as the aggressiveness of the die layout in terms of just how much silicon real-estate they budgeted for the sram and the GHz/W profile they wanted to hit with the sram.
Lots of tradeoffs get made, which is why we try an limit the comparisons we make (and extrapolations from there) based on sram comparisons.
It helps, sram comparisons, but its never quite apples to apples as it might be a Gala apple compared to a Red Delicious apple when we get down into the nitty gritty of the design choices that were made from product to product.
