++ ATOT official NEF thread part IV ++

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rudeguy

Lifer
Dec 27, 2001
47,351
14
61
The CY62167DV30 is a high-performance CMOS static RAM
organized as 1M words by 16-bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. The device can also be put into standby mode when
deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are
HIGH). The input/output pins (I/O0 through I/O15) are placed
in a high-impedance state when: deselected (CE1 HIGH or
CE2 LOW), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a Write operation (CE1 LOW, CE2 HIGH and WE
LOW).
 

rudeguy

Lifer
Dec 27, 2001
47,351
14
61
Writing to the device is accomplished by taking Chip Enables
(CE1 LOW and CE2 HIGH) and Write Enable (WE) input LOW.
If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0
through I/O7), is written into the location specified on the
address pins (A0 through A19). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O8 through I/O15) is written into
 

rudeguy

Lifer
Dec 27, 2001
47,351
14
61
Reading from the device is accomplished by taking Chip
Enables (CE1 LOW and CE2 HIGH) and Output Enable (OE)
LOW while forcing the Write Enable (WE) HIGH. If Byte Low
Enable (BLE) is LOW, then data from the memory location
specified by the address pins appear on I/O0 to I/O7. If Byte
High Enable (BHE) is LOW, then data from memory appear on
I/O8 to I/O15. See the truth table at the back of this data sheet
for a complete description of Read and Write modes.
 

rudeguy

Lifer
Dec 27, 2001
47,351
14
61
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground potential ...... –0.2 V to VCC + 0.3 V
DC voltage applied to outputs
in High-Z state[6, 7] ................................ –0.2 V to VCC + 0.3 V
DC input voltage[6, 7] ............................. –0.2 V to VCC + 0.3 V