ASML tips roadmap for EUV litho production platform

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Idontcare

Elite Member
Oct 10, 1999
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TSMC's Burn Lin Touts E-Beam, Slams EUV

Speaking at an International Electron Devices Meeting (IEDM) short course on scaling challenges, Lin — credited with pushing the lithography world toward immersion techniques — delivered a detailed critique of EUV lithography, arguing that early EUV SRAM patterning results at IMEC, for example, do not represent the challenges EUV faces in real-world, high-volume manufacturing. "The costs of EUV are not acceptable," he said.

Lin said even if they can be made to work in high-volume fabs, EUV tools will have such a large carbon footprint that they will be environmentally unsound. Chipmakers using EUV systems will need "a nuclear power plant next to the fab, and a cooling facility that can provide hundreds of liters per minute," Lin said. Although EUV scanner manufacturers have estimated that each EUV tool will require 640 kW to operate, compared with 165 kW for an immersion scanner, Lin said the actual requirements are much higher. With a more realistic estimate of resist sensitivity (30 mJ/cm2 instead of the widely quoted 10 mJ/cm2), and factoring in what Lin said were "conservative collector and source efficiencies," an EUV tool would consume 12.85 MW of electricity.

http://www.semiconductor.net/article/440615-TSMC_s_Burn_Lin_Touts_E_Beam_Slams_EUV-full.php

If it were anyone else in the industry saying this they'd be laughed off the stage, but this guy prompted the creation of the current immersion-litho industry at a time when Intel was saying 157nm litho was a dead-end and EUV was the only option so I put a lot of stock into what he is saying now.

The part about the masks is relevant if you are a foundry or an IDM with a large portfolio of products as both cases means you are going to be dealing with a lot of mask sets.

If you are a memory manufacturer or Intel then the number of masksets versus the volume of product generated with those masks makes the cost issue kind of moot.

Being a bit more forward looking, e-beam is the future after EUV anyways, so if e-beam's timetable can be shortened then it might make a lot of sense to discard EUV just as it made sense to discard 157nm.
 

Idontcare

Elite Member
Oct 10, 1999
21,110
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THANK YOU for that link! I read this article shortly after it had been published and somehow in the years that passed since then I forgot enough of the details that I could not track down the article when I went looking for it a year or two ago. I could have sworn the originating authors were Intel employees, now I see why all my re-searches for that article always turned out to so fruitless.

The article itself is just an exquisite tour de force of applied physics and information theory. Whats not to like or appreciate about that?

The fundamental limits entertained and discussed in the article are correct, of course, but there are some assumptions made in their application to CMOS scaling. The authors rightly touch on a number of these assumptions in their "reality check" section.

IV. REALITY CHECK: COMPARISON WITH THE 2001 ITRS
Present day and projected silicon integrated circuits differ
from the above model in several respects. First, the packing
density is less than , since the effective size of FET
switch is larger than the channel length (in practice,
10 15 ). Second, in integrated circuits, there exist many
layers of interconnects that dissipate energy and also require
some floorspace. It is well known that the minimum energy​
dissipated by interconnects for successful signal transmission
is also . Therefore, taking into account that
a part of chip area is occupied by interconnect does not substantially
change estimate for minimum power.
Third, not all switches in the circuit change their state simultaneously;
in other words, the activity factor is less than 100%.​

Note that both the packing density as well as the switch rate are both assumed to be at their theoretical limits throughout the calculations in the article.

There are logic circuits, e.g. SRAM, which certainly are pushed to have packing densities at the limit of the process technology design rules and capability for a given node. But many other logic circuits are setup to maximize performance and not necessary minimize die area as the first priority.

And the question matter of the number of transistors that are actually switching...I think CPU's follow along the lines of human brains where only something like 10% of the circuits are active at any given moment in time. The number might be higher for microprocessors but the point is that this gives you another order of magnitude of play in your transistor counts before reaching the same limits.

Another thing you probably noticed is that the 22nm node and 9nm gate numbers are used simply for the fact they were targets printed in the ITRS. HKMG alleviates the necessity of scaling Lg more aggressively than the node label (once again, as it was pre-0.35um), for most 22nm process nodes if they are HKMG based their min-Lg's will be right around 20nm, maybe 15nm for your more aggressive guys. An Lg of 9nm like they worried themselves about in the article probably won't be used until the 11nm node.

Engineering of the electron and hole mobilities of by stress manipulation and materials choices (gate stack as well as channel) has a LOT of gas and room to go from a materials science engineering viewpoint. The economics of scaling will dictate the pace of scaling, not the physics of the length-scales involved.

Power consumption requirements are driving real changes in the approaches to process technology as well as device integration. Future nodes may focus more on cost reduction rather than performance enhancement, or focus on performance enhancement rather than cost reduction, but not both.

Are you familiar with the history of the "tyranny of numbers" that was used to characterize the computing era prior to the invention of the IC? I think we ultimately will end up back at that point. We will be once again dealing with the tyranny of numbers of integrating thousands and tens of thousands of discrete IC's (each themselves operating at the limits of physics outlined in your linked article) which are integrated at a macro-scale into a computing infrastructure that harnesses the combined computing power while simultaneously distributing the power-dissipation over an area orders of magnitude larger than the chip sizes themselves.

Much like the distributed computing, the internet, and supercomputer architectures of today.

Thanks again for that link, I sorely missed having the liberty of reviewing that article to refresh my memories over these past few years :)
 

Idontcare

Elite Member
Oct 10, 1999
21,110
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Engineering of the electron and hole mobilities of by stress manipulation and materials choices (gate stack as well as channel) has a LOT of gas and room to go from a materials science engineering viewpoint. The economics of scaling will dictate the pace of scaling, not the physics of the length-scales involved.

This is what I was speaking to when I made the statement above:

Intel tweaks high-k stack to get GaAs on silicon


intel400.jpg

Transmission electron microscope image of InGaAs quantum well field-effect transistor showing high-k composite gate stack.

Intel engineered a high-k dielectric for the demonstration InGaAs transistor that differs in formulation from the high-k material Intel uses for its advanced silicon transistors. The high-k dielectric uses a composite structure of 4 nm of tantalum silicon oxide atop a 2-nm barrier layer of indium-phosphorus. To retain high carrier mobility in the quantum-well FET, two buffer-layer materials—indium-aluminum-arsenide and indium-phosphorus—were required between the high-k dielectric and the quantum well.

Intel now is working on materials and architectures that will enable smaller contacts and is characterizing the quantum mechanical effects that will likely be triggered as its InGaAs quantum-well FETs are scaled down. Mayberry believes compound III-V transistors could begin to replace traditional silicon technology around 2015, but only if the integration challenges can be overcome.

http://www.eetimes.com/news/semi/showArticle.jhtml;?articleID=222002634

There is a whole periodic table of elements for process technologists to play with whenever the time (and money) comes to do so. We've barely scratched the surface of possibilities.

The more nearer challenge posed by the limits of physics was recently touched on by TuxDave in another thread, those pesky wires are becoming a serious performance bottleneck. Little can be done about that, the periodic table is nearly tapped out with us using copper already.

Alloy engineering is the obvious path forward, specifically with the intent to create RT superconductors.

The other brute-force method will be to simply stop scaling the transistor density (continue scaling the xtors themselves of course to reduce the switching speed and power consumption) and use big fat low-resistance wires between the transistors (add more metal levels and keep the design rule pitches nice and loose). It adds cost, exponentially so because of the reduction in yields from elevated cycle-time and additional process steps, but that 3D wiring topology is about the only way to resolve the RC delay issue barring some breakthrough in the conductivity of electrons through solid materials.
 

Markfw

Moderator Emeritus, Elite Member
May 16, 2002
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Doesn't this belong in highly technical ? It makes my head hurt reading this.
 

Idontcare

Elite Member
Oct 10, 1999
21,110
64
91
Maybe but I don't lurk/visit the highly technical sub-forum any more than I do the P&N forum. Mostly for the same reasons too now that I think about it :p
 

Idontcare

Elite Member
Oct 10, 1999
21,110
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Our strategy is to move past the pre-production tool step and straight to purchasing a production-level tool for installation in Fab 8—our new leading-edge fab currently under construction in upstate New York,” Bartlett said. “We are planning to install this tool in the second half of 2012 so we can immediately begin the development work to enable volume production by the 2014/2015 timeframe. It is our collaborative approach to R&D that has put us in a position to make such a move—a move that will accelerate the charge to volume production for the entire industry.

http://www.legitreviews.com/news/8541/

Cool, sounds like GloFo is planning to transition their R&D away from the IBM fab club and doing more internally once their New York fab is up and running.
 

epidemis

Senior member
Jun 6, 2007
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Intel's roadmap is somewhat ambitious..

http://techon.nikkeibp.co.jp/english/NEWS_EN/20090825/174503/?SS=imgview_e&FD=49498919&ad_q

*I* can imagine many applications of the increased transistors. As long as my current computer is big and power sucking there's room to go. Integrating certain features on the die or chip requires smaller transistors to do the same thing.

In an interview with John Carmack he said the ray tracing engine he had in mine wasn't practical, and probably wouldn't be before a decade has passed

When you shrink the transistors, it usually takes less power to switch, it's a very important aspect for handhelds, supercomputers and server clusters
 
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cbn

Lifer
Mar 27, 2009
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As for the topic, what I like about these kinds of roadmaps is they are what give us outsiders and laymen the confidence to feel good about node cadence continuing.

I like the fact node cadence can progress to 5nm, but just wonder what other strategies chip makers will also consider along the way.

For example, Intel will just start to produce Low power 45nm in 2011 (when it is already producing 32nm now). Does this have to do with Intel wanting to reduce heat density of their xtors compared to a chip using similar wattage at 32nm?
 

cbn

Lifer
Mar 27, 2009
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Once Intel has a measured lead over the rest of the industry, I estimate around the 16nm node they will have iterated themselves to the point of being a full node ahead of the second place position in the industry by that time (i.e. Intel debuts 16nm at nearly the same time as competitor XYZ is debuting node N-1 while the rest of the industry is still on N-2), the management at Intel will have an ever more challenging situation of justifying paying an exorbitant premium on process technology development to maintain that technology lead and cadence ad infinitum.

Wow, that would be a substantial lead (to say the least).

At that point would they be more inclined to consider 3D chip design on larger process vs pushing the bleeding edge of 2D chip development on a smaller node?

Furthermore, Does anyone have theories on what technology would benefit from 3D chip technology the most: CPU or SSD? (I have done zero reading on 3D chip design for SSD, not that I know anything about computers anyway :D)
 
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IntelUser2000

Elite Member
Oct 14, 2003
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Wow, that would be a substantial lead (to say the least).

You know, they have been only getting lead because the other manufacturers were getting longer at coming out with a new process, while Intel was rather constant. Actually, even Intel did slow down during the 90nm era, when the first launch vehicle, the Prescott was massively delayed.

The company claims that it can develop advanced process technologies by itself until 11nm.

http://techon.nikkeibp.co.jp/english...=49498919&ad_q

The link says Intel might not be alone in post-11nm development. Who do you think the partner would be?
 

khon

Golden Member
Jun 8, 2010
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Somewhat unrelated, but I just got a job offer from ASML.

Come January 1st I will be their newest Application Engineer, which means I will be one of the guys who helps introduce new products, like say EUV equipment ...

:biggrin:
 

Martimus

Diamond Member
Apr 24, 2007
4,490
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Somewhat unrelated, but I just got a job offer from ASML.

Come January 1st I will be their newest Application Engineer, which means I will be one of the guys who helps introduce new products, like say EUV equipment ...

:biggrin:

Congrats! I look forward to hearing a more insider look into new process technology from you in the future.
 

khon

Golden Member
Jun 8, 2010
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Congrats! I look forward to hearing a more insider look into new process technology from you in the future.

Heh, I wouldn't count on it. The NDA is fairly extensive, and the fines for breaking it are rather large.
 

Idontcare

Elite Member
Oct 10, 1999
21,110
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Somewhat unrelated, but I just got a job offer from ASML.

Come January 1st I will be their newest Application Engineer, which means I will be one of the guys who helps introduce new products, like say EUV equipment ...

:biggrin:

Congrats! :thumbsup:

It's an interesting ride, working as an engineer in this specific industry. My advice, save like mad during the boon-times because rainy days are guaranteed no matter your proficiency and clout.

The analogy that was communicated to me was to think of job security and cashflow in this industry like trying to drink from a fire-hydrant...it's either gushing at you full blast or its shut off and dry as a bone.

Plan for both happening, repeatedly, but rely on neither occurring nor persisting perchance they do occur.
 

Martimus

Diamond Member
Apr 24, 2007
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Heh, I wouldn't count on it. The NDA is fairly extensive, and the fines for breaking it are rather large.

I can understand that. I can't even tell you where I work, let alone anything about it.
 

Idontcare

Elite Member
Oct 10, 1999
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Idontcare

Elite Member
Oct 10, 1999
21,110
64
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Industry mulls 6.7-nm wavelength EUV

ASML Holding NV is just barely shipping its first pre-production extreme ultraviolet (EUV) lithography tool, based on a 13.5-nm wavelength technology.

Rival Nikon Corp. is working on similar EUV tools. But according to Nikon, the industry is now in discussions about the development of EUV, based on a 6.7-nm wavelength technology

http://www.eetimes.com/electronics-news/4213580/Industry-mulls-6-7-nm-wavelength-EUV

Interesting. We all expected there to be something post-13.5nm EUV but the cost-benefits of 13.5nm may actually get eclipsed by 6.7nm EUV as the production timeline for 13.5nm slips.
 

Idontcare

Elite Member
Oct 10, 1999
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Another milestone. They may actually get this into production by 14nm :D

Nope...spoke too soon :p

Intel: EUV late for 10-nm milestone

At present, Intel plans to extend today’s 193-nm immersion lithography to the 14-nm logic node, which is due out in the second half of 2013. Then, the chip giant hopes to insert EUV for production at the 10-nm logic node, which is expected to appear in the second half of 2015.

http://www.eetimes.com/electronics-news/4213628/Intel--EUV-misses-10-nm-milestone

EUV is out for 14nm at Intel, at risk of missing 11nm as well from the sounds of it.
 

khon

Golden Member
Jun 8, 2010
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For those interested the latest status for EUV is this:

[url=http://www.eetimes.com/electronics-news/4213730/ASML-claims-progress-in-EUV]EE Times[/url] said:
ASML claims progress in EUV

At the SPIE Advanced Lithography conference here, ASML Holding NV disclosed more details about its progress with extreme ultraviolet (EUV) lithography.

ASML’s pre-production EUV tool is said to be patterning images down to 18-nm, but as reported, the machine throughput remains problematic due to issues with the power sources. The company also tweaked the specifications for the follow-on, product-worthy tool, which is due to ship in 2012.

The power source they refer to here is the light source (laser), which is currently the main problem. Simply put the EUV lasers are too weak, which means it takes too long to expose a single wafer, so the throughput is quite low.
 
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Martimus

Diamond Member
Apr 24, 2007
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For those interested the latest status for EUV is this:



The power source they refer to here is the light source (laser), which is currently the main problem. Simply put the EUV lasers are too weak, which means it takes too long to expose a single wafer, so the throughput is quite low.

Would it be feasible to add additional lasers to the tool, and run them at higher power to minimize downtime? (In other words, have 3 lasers, with each one running at 100W for 1/3 of the time, while the other two are off and cooling down). I could see that being difficult to keep alignments proper, but it is the simplest solution to the problem I can think of right now.
 

Idontcare

Elite Member
Oct 10, 1999
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Would it be feasible to add additional lasers to the tool, and run them at higher power to minimize downtime? (In other words, have 3 lasers, with each one running at 100W for 1/3 of the time, while the other two are off and cooling down). I could see that being difficult to keep alignments proper, but it is the simplest solution to the problem I can think of right now.

It's a footprint issue. If you just want higher aggregate throughput you buy more tools and run them in parallel. A typical fab will have 10 or so 193nm scanners for example.

But the challenge is the square acreage allocated to multiple EUV steppers, in addition to the cost of buying multiple steppers.

There is a also a conflict of interest in the equation. The customer wants to buy as few tools as possible, and buying fewer tools is made possible by having the throughput of the tools themselves become higher.

Q: Who is going to make the throughput higher? A: The very same company that wants to sell them, lots of them, the more of them they can sell the better.

So it is not as simple as "please triple the throughput so I only have to buy one of them instead of three of them" because the supplier is going to say "well my revenue model is unchanged, so if you only buy one tool then I need to sell it to you for 3x as much".

The motivation for the tool supplier to bend a little on price is the threat/fear of losing the sale to competition...which is why GloFo and Intel are keen to keep Nikon in the EUV race to balance ASML's obvious need to do what is in the best interests of their shareholders.

I've worked on all sides of that dynamic business relationship and it can be interesting from many perspectives, but loads of fun. (until the jdp comes to an end, then it ain't so much fun as people usually get laid off at whatever company did not get the contract :()
 

Soleron

Senior member
May 10, 2009
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I've worked on all sides of that dynamic business relationship and it can be interesting from many perspectives, but loads of fun. (until the jdp comes to an end, then it ain't so much fun as people usually get laid off at whatever company did not get the contract :()

I can't see how to fix the problem you're talking about, that you need to employ two sets of people to do the work of one just so there's 'competition' and the cash is actually directed to R&D by those companies.

The optimal way would just be to have the first team's engineers do the work required. Then the world itself would be better off by a large amount from the saved resources.