Originally posted by: Viditor
Originally posted by: Idontcare
On a side note...anyone else look at the slide I linked and think it is kinda odd/sad that the technology highlight AMD has for their 45nm node is immersion litho? A tool and process you buy turnkey from a vendor, like the myriad of other tools purchased for the same?
I'm not sure what you mean here...AMD was the one of the first to go with immersion litho. Intel chose to hold on immersion litho until 32nm, so they still have the "hard yards" ahead of them.
What vendor sells a turnkey 45nm immersion litho line for SOI that fits into APM 3.0 systems?
I would have thought those were custom designed tools...am I wrong?
You have to understand what litho is and does, it is invariant to substrate type. Bulk Si and SOI do not get different litho approaches. You do have different implant, etch, and cleans.
But again it is rather unusual to put a particular piece of equipment forward as your best feature of an entire process node. As I stated, look at the other node assets that AMD highlights and you can see (even without being a process development engineer) which of those things doesn't belong there.
As for the "hard yards" comment...it is true AMD was first (of the two) to implement Cu and low-k, but it certainly wasn't to Intel's detriment that they held onto Al and SiO2 for an extra node.
We can speculate whether Intel or AMD has more or less experience with immersion litho at this point, but consider AMD is releasing their immersion supported 45nm node nearly (or at least) a full year after Intel.
Had they released immersion 45nm the same time as Intel released double-pattern dry 193nm litho then you could have some merit pressing on the issue as a point of distinguishment between the two.
At any rate it is laughable to me that any company in this business would highlight a tool they purchased (one that anyone else can purchase from the same supplier) as the key technology attribute of their 4yrs of process development effort. Immersion litho is not something that makes any difference to the device's performance, it is entirely for improving yields (or decreasing the yield loss from litho passes as it were).
The fact that the integrated device from Intel's 45nm node contains HK/MG is what improves it's performance, not that it uses a disposable gate (replacement gate) with the metal gate added post CMP and poly-si strip. When you cut open a Shanghai chip and analyze the process technology you are not going to find a layer in there with a label saying "hi, thanks to immersion litho this part of my in the xtor is performing waaayy better, thanks for asking".
Uhg, this is turning into a pointless rant. I just wanted to make a passing observation, if anything a tinge of disappointment. It might be too much of an inside joke that only the handful of process development engineers here would get because it takes a backdrop of the work experience to communicate the funniness of it I suppose.
I love immersion litho (we had it at TI too, for 45nm deployment), if optimized and leveraged to its full potential it will improve yields and reduce cycle time. But it won't make 3GHz chips run at 4GHz and it won't make 100W processors consume 50W. HK/MG does that, ULK helps with that. Basically all the features they promised for 45nm that are now being pushed off to 32nm.