- Mar 10, 2006
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So, I was thinking...we're hitting pretty much the physical limits of how much we can shrink transistors.
When that limit gets hit, what do we do then?
When that limit gets hit, what do we do then?
So, I was thinking...we're hitting pretty much the physical limits of how much we can shrink transistors.
When that limit gets hit, what do we do then?
So, I was thinking...we're hitting pretty much the physical limits of how much we can shrink transistors.
For interconnects (replacing copper), maybe. Maybe even for replacing the metal gate on transistors. But that probably won't help shrink them past 5nm. Edit: I could be wrong.Graphene perhaps...
For interconnects (replacing copper), maybe. Maybe even for replacing the metal gate on transistors. But that probably won't help shrink them past 5nm.
I wonder if anyone's ever tried using both sides of a silicon wafer? Twice as many transistors per square mm, right? ^_^
I wonder if anyone's ever tried using both sides of a silicon wafer? Twice as many transistors per square mm, right? ^_^
So, I was thinking...we're hitting pretty much the physical limits of how much we can shrink transistors.
When that limit gets hit, what do we do then?
i believe the aliens Intel holds in their basement have already given them the technology. they're just preparing it for mass production.
Quantum transistor promises easier fab than Intel's 3D transistor
Avto Metals plc's Avto Quantum Transistor (AQT), on which it recently received a US patent, modulates electrical signals via a tunneling electron either constructively or destructively interfering with electrons' wave function in a gate material.
Benefits of the quantum-effect transistor include smaller size, faster operation, and lower power and heat. Avto claims that the transistor is easier to manufacture than advanced-concept transistors, such as Intel Corporation's "trigate" 22nm node 3D transistor.
Avto's patent, US Patent 7,893,422, "Transistor on the Basis of New Quantum Interference Effect," describes a quantum interference transistor made of a thin metal film with source and drain zones, a several-angstroms-thick insulating layer above the thin film, and a smaller metal island gate on top. The quantum interference effect in the thin film creates a potential barrier (V=0) or does not exist (V=Vc), explained Dr. Walitzki. "When the potential-barrier exists it is a case of a closed transistor and when no potential-barrier exists it is a case of an open transistor." Walitzki says this results in more perfect open and closed conditions, avoiding current leakage, noise, and wasted power.