Using PCM to replace DRAM is a formidable challenge, because very fast switching times in the nanoseconds range and extremely high cycle numbers of ∼10^16 present a combination of requirements that have not been achieved by phase changematerials. DRAM replacement is a special case since DRAM is a volatile memory, whereas PCM is a non-volatile memory.
If PCM were to achieve DRAM-like performance, it would open up possibilities to realize completely new computer architectures. Very fast switching times have been achieved for several phase change materials, including Ge2Sb2Te5 and GeTe in actual PCM devices. The high cycle number remains an enormous challenge, but it appears that scaling to smaller dimensions of the phase change material is beneficial for cycling. Data measured on highly scaled PCM cells using an Sb-rich Ge-Sb-Te phase change material demonstrated 10^11 cycles under accelerated testing conditions using a switching power of 45 pJ, which leads to an extrapolated cycle number of 6.5 × 10^15 cycles under normal switching conditions using 3.6 pJ.