Silicon Interposers Bridge to 3-D TSVs
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Elpida said sampling of an 8-Gb 3-D DRAM will begin in early 2010.
Both Samsung and Elpida have outlined plans for 8 Gb DDR3 DRAM memory prototypes with 3-D TSVs in 2009. Elpida said a pilot line is in place and sampling would begin in early 2010. Hiroaki Ikeda, an Elpida manager, and Tae-je Cho, senior engineer at Samsung, indicated that their respective companies were moving forward with their 3-D technologies.
http://www.semiconductor.net/article/441461-Silicon_Interposers_Bridge_to_3_D_TSVs-full.php
Sweet, 8Gb dram chips (that's 1GB per chip package) means 8GB dimms (8 chips per dimm for single rank).
Bring on the (hoepfull cheap) 48GB x58 rigs!