Sematech Crafts ZIL Solution for 16 nm

Idontcare

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Oct 10, 1999
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Sematech Crafts ZIL Solution for 16 nm

Sematech (Austin, Texas) researchers said they are confident they can remove the oxide interface layer between the hafnium-based high-k layer and the silicon channel, sharply improving the equivalent oxide thickness (EOT) within the next two to three years.

By removing the interface layer, a Sematech team was able to reduce the EOT to 0.59 nm for a hafnium-based gate stack applicable to 16 nm CMOS devices.

http://www.semiconductor.net/a...Solution_for_16_nm.php

ZIL = zero interface layer, refers to the 0.3-0.4nm silicon oxide layer that remains between the silicon channel and the HK gate oxide even in Intel's 45nm HKMG xtors.

(pretty pictures included in the link, check it out)

Might be too technical for the CPU forum, but some folks might enjoy being exposed to the topic nonetheless.