Adul
Elite Member
http://www.theinquirer.net/?article=4804
MEMORY ROADMAPS seen by the INQUIRER indicate that Samsung, at least, will be able to push ahead with DDR 400 in the fourth quarter of this year.
In the meantime it is increasing production of its DDR 333 memory.
The first densities Samsung will produce are 128Mb chips at 2.5 volts, but it will move to 256Mb chips by Q1 of 2003, the roadmaps indicate. DDR 333 memory chips in 1Gb densities are not due until the end of next year.
Samsung is already shipping samples of DDR-II at 512Mb, but in Q4 this year it will release 1.8 volt 667/533/400 DDR-II. In Q3 of next year, it will introduce a new die, the E-die, for these parts at x4, x8 and x16, and in densities of 256Mb.
The Prescott processor Intel releases next year uses a 666/7 front side bus.
MEMORY ROADMAPS seen by the INQUIRER indicate that Samsung, at least, will be able to push ahead with DDR 400 in the fourth quarter of this year.
In the meantime it is increasing production of its DDR 333 memory.
The first densities Samsung will produce are 128Mb chips at 2.5 volts, but it will move to 256Mb chips by Q1 of 2003, the roadmaps indicate. DDR 333 memory chips in 1Gb densities are not due until the end of next year.
Samsung is already shipping samples of DDR-II at 512Mb, but in Q4 this year it will release 1.8 volt 667/533/400 DDR-II. In Q3 of next year, it will introduce a new die, the E-die, for these parts at x4, x8 and x16, and in densities of 256Mb.
The Prescott processor Intel releases next year uses a 666/7 front side bus.
