• We’re currently investigating an issue related to the forum theme and styling that is impacting page layout and visual formatting. The problem has been identified, and we are actively working on a resolution. There is no impact to user data or functionality, this is strictly a front-end display issue. We’ll post an update once the fix has been deployed. Thanks for your patience while we get this sorted.

Samsung 73nm SLC Flash

K

kleinwl

Senior member
Taken from EE times:
4GB NAND flash features:

73nm word-line (control gate) half pitch
54nm space between floating gates
90nm control gate
90nm bit line contacts
in a tungsten silicide over polysilicon.

However Toshiba's 90nm MLC FLASH
has a 138mm die (vs. Samsung's 156nm) for 4GB
50ns serial accesstime min (vs. Samsung's 25ns)
600us page pgm (vs. samsungs's 200us)
2ms block erase (vs. samsung's 1.5ms).
 
You must log in or register to reply here.

TRENDING THREADS

Back
Top