The type of memory errors you are trying to reproduce would be caused eventually by any high energy gamma ray, regardless of source. That energy is measure in MeV (mega-electron volts) or GeV (giga) rather than the gamma from Americium, which is measured in KeV (kilo-electron volts).
The memory bit-flipping error could be caused by a Compton Scattering or Pair-Production event but would have to hit the memory module in very precise locations to cause a change. Probably would have to right in the P-N junction of a transistor. Plus, there are times in the RAM refresh cycle where it will be more or less sensitive. All in all, it becomes a probability question.
High energy gammas of sufficient quantity to hit a precise location at a sensitive time.
Sorry, but Beta and Alpha particles aren't going to be big players in this. They won't make it through the plastic case. There are no thin, effective gamma or neutron shields though, so they will be your culprits.
For manufacturers of circuitry to be used in space or at nuclear facilities, the bigger question is how to use smaller and smaller die sizes and fabrication methods but maintain some stability in radiation flux. If you've ever wondered why they still use the equivalent of older 486 and 386 processors in spaceborne craft, its because the wider silicon data path is much less sensitive to disruption by an occasional gamma collision. Make the path too skinny, and a single high energy gamma can actually damage the conductor. All materials are damaged by radiation flux. Plastics harden, metals get brittle, PVC starts to give off chlorides to cause corrosion, etc...