OK, I've been reading some (not really much) about these cells and came up with some really hard questions about their design and inner workings.
I have to say first, that my chemistry knowledge is really very basic and that my thinking may be way off here.
The basic principle is faily simple: on one side you have silicon and another, possibly order 5 element (i hope that is the right term, meaning it has 5 instead of full 8 electrons in it's outer shell vs Si or C, which have 4), mixed in about 1000000:1 ratio. On the other side, you have approx the same ratio of Si and another, order 3 element. The first side will emit electrons when hit by light (since the 5th electron is free and wanting to go somewhere), the other will receive them (since the order 3 element wants another electron).
Now for the problems i see with this design:
1) Why does the mixture have to be 1 to a million??? Would it not be better to increase the order 5 element ratio to increase the number of electrons that want to go hiking around? While at it, why not use 100% order 7 element which would really have a lot of electrons wanting to find a free spot in another element's shell? Same goes for the receiving side, of course. Of course i realize that forcing an order 7 element to form a crystalline bond using 4 electrons would be a darn hard thing to accomplish
2) What's so special about silicon that IT has to be used for the material? The logic that seems apparent here is that you need molecules with as many as possible free radicals in order to move as many as possible electrons. Should there be a problem with bond creation, you can just separate the positive radical and negative radical materials by a layer of as conductive as possible metal.
3) Would increasing the number of free radicals make it easier for electrons to pass the barrier (the connection between the materials, where all molecules have achieved perfect balance), or harder? This is in relation to cell efficiency. Obviously, current designs are not particulary efficient (some 10% or so) due to the fact that some photons simply do not carry enough energy to knock off that free electron. I suppose it has a great deal to do with the barrier.
4) While at it, why is Si a semiconductor and C is not? They both are order 4 elements and they both form crystalline structures when in pure form. They also seem to need huge pressure to do so, otherwise they like much more to bond with oxygen or something else.
OK, let this be enough for one post. Hope somebody has an idea how these things work and will be able to shed some light on this for me.
I have to say first, that my chemistry knowledge is really very basic and that my thinking may be way off here.
The basic principle is faily simple: on one side you have silicon and another, possibly order 5 element (i hope that is the right term, meaning it has 5 instead of full 8 electrons in it's outer shell vs Si or C, which have 4), mixed in about 1000000:1 ratio. On the other side, you have approx the same ratio of Si and another, order 3 element. The first side will emit electrons when hit by light (since the 5th electron is free and wanting to go somewhere), the other will receive them (since the order 3 element wants another electron).
Now for the problems i see with this design:
1) Why does the mixture have to be 1 to a million??? Would it not be better to increase the order 5 element ratio to increase the number of electrons that want to go hiking around? While at it, why not use 100% order 7 element which would really have a lot of electrons wanting to find a free spot in another element's shell? Same goes for the receiving side, of course. Of course i realize that forcing an order 7 element to form a crystalline bond using 4 electrons would be a darn hard thing to accomplish
2) What's so special about silicon that IT has to be used for the material? The logic that seems apparent here is that you need molecules with as many as possible free radicals in order to move as many as possible electrons. Should there be a problem with bond creation, you can just separate the positive radical and negative radical materials by a layer of as conductive as possible metal.
3) Would increasing the number of free radicals make it easier for electrons to pass the barrier (the connection between the materials, where all molecules have achieved perfect balance), or harder? This is in relation to cell efficiency. Obviously, current designs are not particulary efficient (some 10% or so) due to the fact that some photons simply do not carry enough energy to knock off that free electron. I suppose it has a great deal to do with the barrier.
4) While at it, why is Si a semiconductor and C is not? They both are order 4 elements and they both form crystalline structures when in pure form. They also seem to need huge pressure to do so, otherwise they like much more to bond with oxygen or something else.
OK, let this be enough for one post. Hope somebody has an idea how these things work and will be able to shed some light on this for me.
