fear the hammerFor starters, Intel will be sampling 90nm based parts by the end of this year. But as a change of pace, instead of the mobile arena being the first to enjoy a new manufacturing process, it will be the desktop and server sectors that get a taste of Intel's 90nm technology first.
Originally posted by: Wingznut PEZ
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Originally posted by: ElFenix
when is this coming?
Originally posted by: SexyK
Originally posted by: ElFenix
when is this coming?
Mid 2003 according to Anand's article.
Kramer
I know... But I REALLY like it when Intel announces this stuff. Then I can actually talk about it and maybe even give better answers than "Sorry, I can't talk about future products."Originally posted by: Sunner
Like you didn't know all of this already![]()
Partially depleted silicon (which is what AMD will be using) is not a total "win-win" situation... It has it's share of drawbacks. Namely a significantly higher cost and native defects in the silicon itself. Besides, probably the biggest benefit of SOI is to reduce junction capacitance, but Intel's designs already have a low junction capacitance. So, SOI wouldn't be much of a help for them at this time. Intel still may use SOI when fully depleted ("thin SOI") becomes mature... but we'll see.Originally posted by: ALstonLoong
emm..wonder why intel dont wanna use SOI in prescott ...instead of waitting for 3 more years 2005.
Ah... One must have patience, Grasshoppa!Originally posted by: SexyK
So when is your sig going to switch over to ".09µ Lithography Technician, Intel Corp."
Hopefully sooner rather than later!
The amount of success Intel has had moving to the .13µ process is really very impressive. One of the phrases I see frequently on here is "simple die shrink." Heh... Ain't nothin' simple 'bout it!Originally posted by: ElFenix
by mid 2k3 amd and everyone else might have figured out the voltage leaks at .13. maybe.
Originally posted by: Wingznut PEZ
heh...he is talkin' about me when referring to the wasted die product/defects...ScrapSiliconStrained Silicon, on the other hand, is pretty much a "win-win" situation. There's a couple percentage point increase in cost, but not the 5x-6x cost like SOI. And the SS wafers have no more native defects than current silicon. As long as you have gate leakage and junction capacitance (relatively) under control, going this route is a no-brainer. With the rumors of both AMD and TSMC having low yields (some say that TSMC is only getting an average of 15% good die off each wafer ), hopefully people are starting to realize how impressive Intel's .13µ process really is.![]()
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And you... You are my mortal enemy! :frown:Originally posted by: ScrapSilicon
heh...he is talkin' about me when referring to the wasted die product/defects...ScrapSilicon![]()
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but I'm recyclableOriginally posted by: Wingznut PEZ
And you... You are my mortal enemy! :frown:Originally posted by: ScrapSilicon
heh...he is talkin' about me when referring to the wasted die product/defects...ScrapSilicon![]()
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No. Gate leakage is basically when the logic gate is closed (transistor "off") but yet the current decides to flow through the gate anyway. Insulation is the basic way to combat leakage. But yes, gate leakage and electromigration become more challenging with each process shrink.Originally posted by: jbond04
Hey Wingznut PEZ, is strained silicon designed to prevent the leakage in circuits (like the problems that some people have when they overvolt Northwood processors too much)? I'm not asking whether or not it will allow better overvolting potential than Intel's .13um process, but I seem to remember Intel saying that as manufacturing processes got smaller and smaller, that leakage becomes a larger and larger issue.
Sorry man, I'm not at liberty to discuss anything but the info that Intel has released.Originally posted by: jbond04
My other question is about "sleep transistors". I think that the idea is that these are suppossed to only deliver current where needed in a chip (perhaps in a processor like the Banias), but that they also help to reduce the problems associated with leakage when moving to a lower process. Are these implemented in the .09um process or will they be implemented later (like .065um)? (I'm referring to this article.)
