- Mar 11, 2000
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Intel makes move in DRAM interfaces
In a technical session at the International Solid State Circuits Conference here Tuesday (Feb. 17) Intel Corp. will quietly signal what may be the company's most aggressive move to influence system memory architectures since the days when the giant of Santa Clara made DRAMs.
In a paper entitled "A 2 Gb/s Point-to-Point Heterogeneous Voltage-Capable DRAM Interface..." Intel authors will disclose some details of a set of test chips that have validated an Intel-designed high-speed DRAM interconnect scheme. And hidden between the lines, the paper will also disclose that Intel has taken the scheme to two major DRAM vendors, who have fabricated test chips of their own.
The effort thus takes on the aspect of an end-run around the ponderous DDR (double data rate) DRAM standardization process, and appears a mortal threat to further major participation in the main-memory interconnect market by Intel's once-beloved partner, Rambus Inc.
In a technical session at the International Solid State Circuits Conference here Tuesday (Feb. 17) Intel Corp. will quietly signal what may be the company's most aggressive move to influence system memory architectures since the days when the giant of Santa Clara made DRAMs.
In a paper entitled "A 2 Gb/s Point-to-Point Heterogeneous Voltage-Capable DRAM Interface..." Intel authors will disclose some details of a set of test chips that have validated an Intel-designed high-speed DRAM interconnect scheme. And hidden between the lines, the paper will also disclose that Intel has taken the scheme to two major DRAM vendors, who have fabricated test chips of their own.
The effort thus takes on the aspect of an end-run around the ponderous DDR (double data rate) DRAM standardization process, and appears a mortal threat to further major participation in the main-memory interconnect market by Intel's once-beloved partner, Rambus Inc.
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