Intel possibly making another transistor change

[Phynaz]

An Intel-led team will reveal a tri-gate FinFET-type quantum-well InGaAs MOSFET at the upcoming International Electron Devices Meeting being held Washington D.C. December 5 to 7.

...At IEDM Intel plans to show the way again with a compound semiconductor version that promises faster transistors than silicon. Intel technical executives have in the past tipped InGaAs, possibly embedded on silicon for ease of manufacturing and to carry non-critical circuitry as a way forward for the semiconductor industry. Intel Fellow Paolo Gargini has proposed the integration of an InGaAs quantum-well FET with a high-K dielectric gate stack.

http://www.eetimes.com/electronics-news/4227382/Intel-compound-FinFET-IEDM

 

[lol123]

Wow... this almost feels like it's getting out of hand.

 

[Tsavo]

Who is Intel's head of R&D? Rod Serling?

 

[Idontcare]

This is the new scaling in a post Moore's law world, you scale the materials to scale the device physics rather than relying on scaling the physical dimensions to accomplish as much.