Intel, Micron, Samsung start NAND scaling race

Idontcare

Elite Member
Oct 10, 1999
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Intel, Micron, Samsung start NAND scaling race

''The move to produce NAND flash at 3x-nm process geometries is well under way and being led by Micron and Intel. Micron stated in its recent financial earnings call that it has completed its transition to 34-nm and that it was able to reduce its costs 35 percent during its fiscal quarter,'' said Joseph Unsworth, an analyst with Gartner Inc., in a report.

''NAND spot prices slipped slightly lower as pricing softened in the 16-Gb and 32-Gb MLC parts, which countered pricing gains in the 8-Gb parts. As the 32-Gb MLC NAND device continues to mature, Gartner expects that it will pressure the lower densities, particularly the 16-Gb part,'' said Gartner's Unsworth.

http://www.eetimes.com/news/se...l;?articleID=218101909

There's a couple lines in the link dedicated to discussing dram market too, but nothing all that surprising is said about dram. I'm more interested in seeing the big guys (IM Flash, Samsung, Toshiba/Sandisk) get into a scaling race with NAND flash.