- Dec 30, 2006
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Here we are intel giving real demo of the up and coming Penryn.
http://www.extremetech.com/article2/0,1697,2087985,00.asp
http://www.extremetech.com/article2/0,1697,2087985,00.asp
:Q*in part*
Intel's announcement today is that the silicon dioxide gate dielectric was replaced with one based on Hafnium, a material with a much higher K value. This makes things work better, faster and cooler. ...
The other half of the announcement is that they are using metal gates, which is the part right above the dialectic, basically the electrode. The old way is to use polysilicon for this material, Intel is now using metal for it. This removes a problem where the silicon dioxide and polysilicon reacted and lessened the effectiveness of the dielectric. ...
you have the first really new way of doing things in years for a mass production semiconductor. It should be better in every way than the chemicals it replaces. Intel is claiming the usual 2x reduction in transistor density, a given on the shrink between 65nm and 45nm, and better performance on top of it. 30% reduction in switching power, 20% faster switching speed or 5x lower source-drain leakage, and a 10x reduction in leakage through the dielectric layer. Not bad.
What you end up with is a chip that runs faster, cooler and takes less voltage. All good things. It will allow Intel to continue Moore's law from 65nm to 45, and possibly below.
Originally posted by: Viditor
I did notice this quote from Intel...
"Intel Senior Fellow Mark Bohr discussed technical details of the new 45 nm process, in particular talking about the company's "high-k plus metal gate" technology. Bohr stated unequivocally that he believes Intel has a substantial lead in high-k plus metal gate, suggesting that competitors won't be able to implement the technology until the 32 nm generation"
Unfortunately for Bohr, AMD and IBM threw some cold water on the prediction...
IBM announcement
"IBM today announced it has developed a long-sought improvement to the transistor - the tiny on/off switch that serves as the basic building block of virtually all microchips made today...Working with AMD and its other development partners Sony and Toshiba, the company has found a way to construct a critical part of the transistor with a new material, clearing a path toward chip circuitry that is smaller, faster and more power-efficient than previously thought possible...The technology, called "high-k metal gate," substitutes a new material into a critical portion of the transistor that controls its primary on/off switching function. The material provides superior electrical properties compared to its predecessor, enhancing the transistor's function while also allowing the size of the transistor to be shrunk beyond limits being reached today"
"IBM has inserted the technology into its state-of-the-art semiconductor manufacturing line in East Fishkill, NY and will apply it to products with chip circuits as small as 45 nanometers (billionths of a meter) starting in 2008"
Originally posted by: Viditor
I did notice this quote from Intel...
"Intel Senior Fellow Mark Bohr discussed technical details of the new 45 nm process, in particular talking about the company's "high-k plus metal gate" technology. Bohr stated unequivocally that he believes Intel has a substantial lead in high-k plus metal gate, suggesting that competitors won't be able to implement the technology until the 32 nm generation"
Unfortunately for Bohr, AMD and IBM threw some cold water on the prediction...
IBM announcement
"IBM today announced it has developed a long-sought improvement to the transistor - the tiny on/off switch that serves as the basic building block of virtually all microchips made today...Working with AMD and its other development partners Sony and Toshiba, the company has found a way to construct a critical part of the transistor with a new material, clearing a path toward chip circuitry that is smaller, faster and more power-efficient than previously thought possible...The technology, called "high-k metal gate," substitutes a new material into a critical portion of the transistor that controls its primary on/off switching function. The material provides superior electrical properties compared to its predecessor, enhancing the transistor's function while also allowing the size of the transistor to be shrunk beyond limits being reached today"
"IBM has inserted the technology into its state-of-the-art semiconductor manufacturing line in East Fishkill, NY and will apply it to products with chip circuits as small as 45 nanometers (billionths of a meter) starting in 2008"