- Jul 4, 2005
- 4,064
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IBM makes alliance with AMD
Fellowship of a semiconductors has been created where the chaps such as IBM, AMD, Henry Richard?s Freescale, Infenion, Samsung and Chartered Semiconductor Manufacturing Ltd joined their forces against Intel. IBM will lead the fellowship into the battle against Intel?s 32 nm process.
The key point in development is the new high k/metal gate that should be ready for the members of the fellowship at second half 2009.
This new fellowship approach should help the IBM clients to make the transition easier and at the same time, the new transistors and process will improve the performance and reduce the power consumption.
IBM and its Alliance Partners have developed low-power foundry Complementary Metal Oxide Semiconductor (CMOS) technology using the 'high-k gate-first' approach and have demonstrated the first 32nm ultra dense static random access memory (SRAM) in this low power technology with cell sizes below 0.15um2. SRAMs are a key building block of computer chip designs and an excellent indicator of the readiness of a technology.
IBM and its Alliance Partners have incorporated the high-k innovation into a new generation of high performance Silicon-On-Insulator (SOI) technology at 32nm. The unique high-k material properties enable a transistor speed improvement of greater than 30 percent over the previous generation of high performance Silicon-On-Insulator (SOI) technology.
Let?s hope that AMD will be on time in late 2009 with its 32 nm products as it looks like Intel will.
Fellowship of a semiconductors has been created where the chaps such as IBM, AMD, Henry Richard?s Freescale, Infenion, Samsung and Chartered Semiconductor Manufacturing Ltd joined their forces against Intel. IBM will lead the fellowship into the battle against Intel?s 32 nm process.
The key point in development is the new high k/metal gate that should be ready for the members of the fellowship at second half 2009.
This new fellowship approach should help the IBM clients to make the transition easier and at the same time, the new transistors and process will improve the performance and reduce the power consumption.
IBM and its Alliance Partners have developed low-power foundry Complementary Metal Oxide Semiconductor (CMOS) technology using the 'high-k gate-first' approach and have demonstrated the first 32nm ultra dense static random access memory (SRAM) in this low power technology with cell sizes below 0.15um2. SRAMs are a key building block of computer chip designs and an excellent indicator of the readiness of a technology.
IBM and its Alliance Partners have incorporated the high-k innovation into a new generation of high performance Silicon-On-Insulator (SOI) technology at 32nm. The unique high-k material properties enable a transistor speed improvement of greater than 30 percent over the previous generation of high performance Silicon-On-Insulator (SOI) technology.
Let?s hope that AMD will be on time in late 2009 with its 32 nm products as it looks like Intel will.
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