IBM and its joint development partners Advanced Micro Devices Inc., Freescale, STMicroelectronics, Toshiba and the College of Nanoscale Science and Engineering, have claimed they have developed the first working SRAM cell implemented in a 22-nm manufacturing process. The cell was built at CNSE's 300-mm research facility in Albany, New York.
http://www.eetimes.com/news/se...HA?articleID=210101316
Good news for sure, although I won't be surprised if Intel shows off a 300mm wafer loaded with 22nm node sram at IDF here shortly.
