- Mar 3, 2017
GAA Is Ready for Customers’ Adoption – 3nm MP in 2022, 2nm in 2025
With its enhanced power, performance and flexible design capability, Samsung’s unique GAA technology, Multi-Bridge-Channel FET (MBCFETTM), is essential for continuing process migration. Samsung’s first 3nm GAA process node utilizing MBCFET will allow up to 35 percent decrease in area, 30 percent higher performance or 50 percent lower power consumption compared to the 5nm process. In addition to power, performance and area (PPA) improvements, as its process maturity has increased, 3nm’s logic yield is approaching a similar level to the 4nm process, which is currently in mass production.
3nm’s logic yield is approaching a similar level to the 4nm
Samsung is scheduled to start producing its customers’ first 3nm-based chip designs in the first half of 2022
Details were disclosed at the company’s 5th Annual Samsung Foundry Forum
Its official, 3GAE is still alive. Seems they have been very secretive about GAA
- Density would be comparable to N5 (my guess)
- But the performance and efficiency is much improved compared to 5LPE.
- Yield similar to 4LPE, not bad on first gen GAA
- Samsung is scheduled to start producing its customers’ first 3nm-based chip designs in the first half of 2022
50% power efficiency gain from 5LPE(P?) --> 3GAE is quite impressive.
30% perf gain from 5LPE(P?) --> 3GAE is equally impressive.
Density is OK, important but even TSMC's figure were very ideal case only and not achievable.
These are much closer to the 2019 figures.
I guess the previous Marketing PR was probably a red herring.
Waiting for David Schor to dig deeper.
Really looking forward to see chips on this.