FYI
Just wanted to post since it seemed interesting.... but Samsung is expecting that DDR and DDR2 shippments will reach parity in 3QTR 2005... which is to say DDR prices will be increasing in he future as it is phased out (can anyone say reason for M2 socket?).
Just a quick comparision
Samsungs K4T51083QC 512MB ram is based on 90nm process - die size 71mm^2
Infineon HYB18T512 512MB ram is based on 110 process - die size 87mm^2
Infineon HYB18T1G800AF-3.7 1GB ram uses a die of 176mm^2 (110 process?)
Micron MT47H64M16BT-5E 1GB ram uses 110 process - die size 180mm^2
Elpida E5104AE-5C-E 512MB ram is based on 110 prcoess - die size 91mm^2
Take away's:
Samsung has the best process for 512MB ram, which should lead to better overclocking headroom... but does not offer the 1GB yet. It is working on shrink to 73nm following it's NAND flash program.
1GB ram is inefficent, since one would expect die saving (vs. 2 512MB units) since some circuits do not need to be duplicated... but 2 512MB only have a die size of 174mm^2, vs. 176mm^2 for a 1GB DDR2 (Infineon dies).
Samsung has 1GB DDR2 components in engineering samples. However, it is not known if they are going to use 90nm process initially, or if they will start at 110nm for the 1st generation.
Samsung 512MB is the only DDR2 that meets the 667 speed grade, the Infineon 1GB meets the 533 speed grade and the Micron 1GB meets the 400 speed grade.
Just wanted to post since it seemed interesting.... but Samsung is expecting that DDR and DDR2 shippments will reach parity in 3QTR 2005... which is to say DDR prices will be increasing in he future as it is phased out (can anyone say reason for M2 socket?).
Just a quick comparision
Samsungs K4T51083QC 512MB ram is based on 90nm process - die size 71mm^2
Infineon HYB18T512 512MB ram is based on 110 process - die size 87mm^2
Infineon HYB18T1G800AF-3.7 1GB ram uses a die of 176mm^2 (110 process?)
Micron MT47H64M16BT-5E 1GB ram uses 110 process - die size 180mm^2
Elpida E5104AE-5C-E 512MB ram is based on 110 prcoess - die size 91mm^2
Take away's:
Samsung has the best process for 512MB ram, which should lead to better overclocking headroom... but does not offer the 1GB yet. It is working on shrink to 73nm following it's NAND flash program.
1GB ram is inefficent, since one would expect die saving (vs. 2 512MB units) since some circuits do not need to be duplicated... but 2 512MB only have a die size of 174mm^2, vs. 176mm^2 for a 1GB DDR2 (Infineon dies).
Samsung has 1GB DDR2 components in engineering samples. However, it is not known if they are going to use 90nm process initially, or if they will start at 110nm for the 1st generation.
Samsung 512MB is the only DDR2 that meets the 667 speed grade, the Infineon 1GB meets the 533 speed grade and the Micron 1GB meets the 400 speed grade.
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