Cheaper Faster Rambus?

MadRat

Lifer
Oct 14, 1999
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Samsung announces cheaper Rambus
Intel rejoices, rubs palms together
By Paul Hales, 27/09/2001 19:50:09 BST


Samsung claims to have developed a faster, cheaper Rambus memory chip.

The chaebol reckons it can produce RDRAM using a 0.12 micron manufacturing process making smaller, cheaper chips. Yet its new RDRAM will be up to four times faster than the current fastest standard memory, 266MHz double data-rate SDRAM, it claims.

Samsung says volume production of the new chips will start during the second quarter of next year.

The new chip will operate at 1,066MHz and the density will increase to 567 megabits per chip. Today's maximums sit at 800MHz and 256 megabits.

The new RIMMs will come in a minimum 1Gb size and likely be paired with the faster 533MHz Pentium 4 front-side bus, which we expect Intella to launch next year (though she denies it) See here.

In February this year, Samsung threw its lot in with Intel in a strategic agreement announced to expand the market for Rambus. Under the terms of that agreement, Intel agreed to ?support capital expenditure investments that will be used to attain additional component test and qualifying capacity needed to boost RDRAM output.? µ
 

Athlon4all

Diamond Member
Jun 18, 2001
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U mean 1 Gb (Gigabit, not Byte). Current RDRAM I think is 512kb. Yeah, this is another step for RDRAM. PC1066+533FSB will spell even higher performance for P4 and Northwood.
 

fkloster

Diamond Member
Dec 16, 1999
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One more thing to remember gang, these parts will be using a 32bit data path...twice the capacity of current rdram offerings.
 

MadRat

Lifer
Oct 14, 1999
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<<One more thing to remember gang, these parts will be using a 32bit data path...twice the capacity of current rdram offerings.>>

Wasn't the pinout designed for this from the outset? RAMBUS pushed manufacturers to make 8-bit and 16-bit varieties in order to cut down the cost. The 8-bit "consumer" grade fell flat on its face even before RDRAM took off.

Samsung Electronics Develops 576Mb RDRAM
By: Rajeev Kadam on 9/28/2001 at 6:50 am PST - Talk Back


Samsung Electronics has completed development of the world's first 576Mb RDRAM. The new device has circuits that are only 0.12 microns in diameter, about 1/830th the thickness of a human hair.

Samsung's next-generation, 576Mb memory device operates at 1,066MHz and is targeted for use in high-performance PCs, workstations and servers. This DRAM processes data about eight times faster than the PC133 SDRAM and quadruple the DDR266 speed. As such, it is well suited for handling moving pictures and graphics.

RDRAM chips normally have to be larger than other DRAMs because of the unique Rambus circuitry. Samsung Electronics has reduced this competitive disadvantage to under 1% by applying the 0.12-micron design rule.

Importantly, the company can apply the same design rule to its 256Mb and 128Mb RDRAMs to achieve productivity that are about 47% higher per wafer, greatly improving cost competitiveness.

Samsung's new 576Mb RDRAMs can be built into a single module to create a high-speed, more than 1-gigabyte memory solution for high-performance PCs, workstations and servers.

Samsung has also bolstered cost competitiveness of the 576Mb RDRAM by using the 4-bank architecture used in the commodity RDRAM chips. The company plans to begin mass production in the second quarter of 2002.

Samsung held 60% of the global RDRAM market in the first half of this year. By being the first in the industry to come out with a 576Mb version, the company has strengthened its leadership position for the next generation as well. Samsung expects sales of its next-generation RDRAM chips to total US$1 billion in 2002 and soar to US$2.5 billion in 2003.