How does one loop Karnaugh maps?
1) Do you know how to write truth tables?
2) Do you know how to convert that into a Karnaugh map?
Then comes looping (which is actually the easiest part).
Then comes translating your loops back into a logical equation.
So to help others that want to help you, can you give some more feedback on what you know so that we don't have to start from scratch?
Yes I know how to do the two things above that you said.
So to circle them.... find a set of squares where
1) Each square is a power of 2 in width and a power of 2 in height
2) Each square encloses ONLY 1's
3) Each square can wrap around the edges
4) And where the union of all those squares cover all the 1's in the Karnaugh map
Done, you "looped a Karnaugh" map.
2) Each square encloses ONLY 1's
You can also circle "x" (don't care) terms, right?
Circuits that can be more simply expressed in POS can be slower than more complex SOP expressions because the "classic" implementations used nor-nor and nand-nand logic gates respectively and nand gates are faster.
Is that typically the case? I had to make some NAND/NOR layouts in the VLSI course I'm in and for similar sized gates the NOR was a good bit faster. (like 150ps fall times for NOR and about 200-300ps for NAND). Just curious as I'm still learning.
edit: Nevermind. When you have a NOR you have two nmos in parallel for the pull-down so it's effectively twice as wide when both nmos are are, to have symmetric rise/fall times the pull-up needs to be pretty large. But for the NAND you have two PMOS in parallel which right off the bat helps balance the rise/fall times. It seems like the NAND could stay closer to minimum gate sizes while still being symmetric. All this also accounts for why the NOR has decent fall times (vs NAND when all gate sizes are minimum).
I just woke up, but is this half-way correct?
Is that typically the case? I had to make some NAND/NOR layouts in the VLSI course I'm in and for similar sized gates the NOR was a good bit faster. (like 150ps fall times for NOR and about 200-300ps for NAND). Just curious as I'm still learning.
edit: Nevermind. When you have a NOR you have two nmos in parallel for the pull-down so it's effectively twice as wide when both nmos are are, to have symmetric rise/fall times the pull-up needs to be pretty large. But for the NAND you have two PMOS in parallel which right off the bat helps balance the rise/fall times. It seems like the NAND could stay closer to minimum gate sizes while still being symmetric. All this also accounts for why the NOR has decent fall times (vs NAND when all gate sizes are minimum).
I just woke up, but is this half-way correct?