IntelUser2000
Elite Member
- Oct 14, 2003
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http://www.electroiq.com/index/disp...-news/2010/february/analyst-take__inside.html
From the video, the presenter explains at 5:50-5:59 pretty much conclusively that while they could have gone with 3-bit per cell NAND at 34nm, they found 25nm better on reliability and density characteristics and will take that road instead.
Whether the 3BPC 34nm went to silicon or not, that part seems to be true:
http://www.eetimes.com/showArticle.jhtml?articleID=219200014&pgno=2
They had the die size numbers back then, wafers could have existed. But now its scrapped for future development and more advanced process nodes.
From the video, the presenter explains at 5:50-5:59 pretty much conclusively that while they could have gone with 3-bit per cell NAND at 34nm, they found 25nm better on reliability and density characteristics and will take that road instead.
Whether the 3BPC 34nm went to silicon or not, that part seems to be true:
http://www.eetimes.com/showArticle.jhtml?articleID=219200014&pgno=2
They had the die size numbers back then, wafers could have existed. But now its scrapped for future development and more advanced process nodes.
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