The Batt?sai
Diamond Member
my half a terahertz? cpu
IBM and Georgia tech researchers have pushed a transistor up to 500GHz by supercooling them to near absolute zero
Researchers at IBM working with Georgia Tech
have achieved a new world record in transistor speed. Using a transistor printed on a silicon wafer laced with germanium the researchers were able to develop a transistor that clocked in at around 350GHz at room temperature. When the researchers dropped the component to 4.5 Kelvin or -451F, near absolute 0 (-459.67F or 0 Kelvin) they were able to increase the clock speed of the transistor to 500GHz.
?For the first time, Georgia Tech and IBM have demonstrated that speeds of half a trillion cycles per second can be achieved in a commercial silicon-based technology, using large wafers and silicon-compatible low-cost manufacturing techniques,? said John D. Cressler, Byers Professor at Georgia Tech?s School of Electrical and Computer Engineering. The silicon processed used by IBM is called silicon-germanium (SiGe) and according to computer simulations run by the company could be able to achieve speeds of near 1THz. The chips used in the research are from a prototype fourth-generation SiGe technology fabricated by IBM on a 200-millimeter wafer.
SiGe is a process technology where germanium is infused in to the silicon. This allows the chips to operate more efficiently boosting performance while reducing power consumption making the process ideal for cellular phones among other applications. Ultra-high-frequency silicon-germanium circuits such as the ones the researchers are working with have potential applications in commercial communications systems, defense electronics, space exploration and eventually consumer products.
IBM and Georgia tech researchers have pushed a transistor up to 500GHz by supercooling them to near absolute zero
Researchers at IBM working with Georgia Tech
have achieved a new world record in transistor speed. Using a transistor printed on a silicon wafer laced with germanium the researchers were able to develop a transistor that clocked in at around 350GHz at room temperature. When the researchers dropped the component to 4.5 Kelvin or -451F, near absolute 0 (-459.67F or 0 Kelvin) they were able to increase the clock speed of the transistor to 500GHz.
?For the first time, Georgia Tech and IBM have demonstrated that speeds of half a trillion cycles per second can be achieved in a commercial silicon-based technology, using large wafers and silicon-compatible low-cost manufacturing techniques,? said John D. Cressler, Byers Professor at Georgia Tech?s School of Electrical and Computer Engineering. The silicon processed used by IBM is called silicon-germanium (SiGe) and according to computer simulations run by the company could be able to achieve speeds of near 1THz. The chips used in the research are from a prototype fourth-generation SiGe technology fabricated by IBM on a 200-millimeter wafer.
SiGe is a process technology where germanium is infused in to the silicon. This allows the chips to operate more efficiently boosting performance while reducing power consumption making the process ideal for cellular phones among other applications. Ultra-high-frequency silicon-germanium circuits such as the ones the researchers are working with have potential applications in commercial communications systems, defense electronics, space exploration and eventually consumer products.
